Thyristor - Diode Modules MFC160 MFA160 MFK160 MFX160 Features：  Isolated mounting base 3000V~ Pressure contact technology with IT(AV) VDRM/VRRM ITSM I2t Increased power cycling capability Space and weight savings AC/DC Motor drives Various rectifiers VALUE SYMBOL TEST CONDITIONS 180 half sine wave 50Hz Single side cooled, Tc=85C Mean on-state current VDRM VRRM Repetitive peak off-state voltage Repetitive peak reverse voltage VDRM&VRRM tp=10ms VDSM&VRSM= VDRM&VRRM+100V respectively IDRM IRRM Repetitive peak current Surge on-state current 10ms half sine wave VR=60%VRRM On-state slop resistance Peak on-state voltage Critical rate of rise of off-state voltage Critical rate of rise of on-state current Gate trigger current Gate trigger voltage IH VGD Rth(j-c) Rth(c-h) Viso Fm Holding current Non-trigger gate voltage Thermal resistance Junction to case Thermal resistance case to heat sink Isolation voltage Single side cooled Single side cooled Thermal connection torque (M5) Stored temperature

Max . junction To case Thermai Impedance Vs.Time 0.17 MTC160/2500 Peak On-state Voltage Vs.Peak On-state Current 0.18 Transient thermal impedance,°C/W Iinstantaneous on-state voltage,volts 100 1000 Instantaneous on-state currant,amperes Fig.1 Max . Pow er Dissipation Vs.Mean On-state Current MTC160高压 MTC160Vs.Mean Max . case Temperature 高压 On-state Current 140 Conduction Angle Case temperature,°C Conduction Angle Max . Pow er Dissipation Vs.Mean On-state Current MTC160高压 Max . case Temperature Vs.Mean On-state Current MTC160 @ Conduction Angle Mean on-state current,amperes Conduction Angle

Surge Current 6 Vs.Cycles 190 Total peak half-sine surge current,kA Fig.8 Gate Trigger Zone at varies temperature 2.5V,150MA Gate characteristic at 25°C junction temperature MFK(DT) MFX(DT)