Catalog excerpts
Thyristor - Diode Modules MFC160 MFA160 MFK160 MFX160 Features： Isolated mounting base 2500V~ Pressure contact technology with IT(AV) VDRM/VRRM ITSM I2t Incrtased power cycling capability Space and weight savings AC/DC Motor drives Various rectifiers VALUE SYMBOL TEST CONDITIONS Mean on-state current 180 half sine wave 50Hz Single side cooled,Tc=85C VDRM VRRM Repetitive peak off-state voltage Repetitive peak reverse voltage IDRM IRRM Repetitive peak current Surge on-state current 10ms half sine wave VR=60%VRRM On-state slop resistance VDRM&VRRM tp=10ms VDsM&VRsM= VDRM&VRRM+100V respectively Peak on-state voltage Critical rate of rise of off-state voltage Critical rate of rise of on-state current Gate source 1.5A tr ≤0.5μs Repetitive Gate trigger current Gate trigger voltage IH VGD Rth(j-c) Rth(c-h) Viso Holding current Non-trigger gate voltage Thermal resistance Junction to case Thermal resistance case to heatsink Isolation voltage Single side cooled Single side cooled Stored temperature
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Max. junction To case Thermai 0.17 Impedance Vs.Time Peak On-state VoltageMTC160 Vs.Peak On-state Current 0.18 Transient thermal impedance,°C/W Iinstantaneous on-state voltage,volts 1000 Instaneous on-state current,amperes Max. Power Dissipation MTC160 Vs.Mean On-state Current Max. case Temperature MTC160 Vs.Mean On-state Current Conduction Angle Case temperature,°C Conduction Angle 50 100 150 Mean on-state current,amperes Case temperature,°C Max. case Temperature MTC160 Vs.Mean On-state Current DC MTC160 Max. Power Dissipation Vs.Mean On-state Current Mean on-state current,amperes...
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Surge Current 6 Vs.Cycles 190 Total peak half-sine surge current,kA Fig.8 Gate Trigger Zone at varies temperature 2.5V,150MA Gate characteristic at 25°C junction temperature MFK(DT) MFX(DT)
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