Thyristor - Diode Modules MFC160 MFA160 MFK160 MFX160 Features：  Isolated mounting base 2500V~ Pressure contact technology with IT(AV) VDRM/VRRM ITSM I2t Incrtased power cycling capability Space and weight savings AC/DC Motor drives Various rectifiers VALUE SYMBOL TEST CONDITIONS Mean on-state current 180 half sine wave 50Hz Single side cooled,Tc=85C VDRM VRRM Repetitive peak off-state voltage Repetitive peak reverse voltage IDRM IRRM Repetitive peak current Surge on-state current 10ms half sine wave VR=60%VRRM On-state slop resistance VDRM&VRRM tp=10ms VDsM&VRsM= VDRM&VRRM+100V respectively Peak on-state voltage Critical rate of rise of off-state voltage Critical rate of rise of on-state current Gate source 1.5A tr ≤0.5μs Repetitive Gate trigger current Gate trigger voltage IH VGD Rth(j-c) Rth(c-h) Viso Holding current Non-trigger gate voltage Thermal resistance Junction to case Thermal resistance case to heatsink Isolation voltage Single side cooled Single side cooled Stored temperature

Max. junction To case Thermai 0.17 Impedance Vs.Time Peak On-state VoltageMTC160 Vs.Peak On-state Current 0.18 Transient thermal impedance,°C/W Iinstantaneous on-state voltage,volts 1000 Instaneous on-state current,amperes Max. Power Dissipation MTC160 Vs.Mean On-state Current Max. case Temperature MTC160 Vs.Mean On-state Current Conduction Angle Case temperature,°C Conduction Angle 50 100 150 Mean on-state current,amperes Case temperature,°C Max. case Temperature MTC160 Vs.Mean On-state Current DC MTC160 Max. Power Dissipation Vs.Mean On-state Current Mean on-state current,amperes Conduction...

Surge Current 6 Vs.Cycles 190 Total peak half-sine surge current,kA Fig.8 Gate Trigger Zone at varies temperature 2.5V,150MA Gate characteristic at 25°C junction temperature MFK(DT) MFX(DT)