Thyristor - Diode Modules MFC135 MFA135 MFK135 MFX135

Product catalog summary

Specifications:
The document provides detailed specifications for thyristor-diode modules, including various electrical and thermal characteristics. Key parameters include:

Mean on-state current (IT(AV)): 135 A
Repetitive peak off-state and reverse voltage (VDRM/VRRM): 1900-2500 V
Surge on-state current (ITSM): 3.6 kA
Thermal resistance from junction to case (Rth(j-c)): 0.200 °C/W
Isolation voltage: 3000 V

Procedures and Test Conditions:
The document outlines test conditions for various parameters, such as:

IT(AV) measured with a 180° half sine wave at 50Hz, single side cooled, Tc=85°C
VDRM and VRRM tested with tp=10ms, VDSM and VRSM are VDRM and VRRM plus 100V
Critical rate of rise of off-state voltage (dv/dt) and on-state current (di/dt) under specified conditions

Norms and Recommendations:
Recommendations include:

Use of isolated mounting base for 3000V isolation
Pressure contact technology for increased power cycling capability
Space and weight savings in applications

Applications:
Typical applications for these modules include:

AC/DC motor drives
Various rectifiers
DC supply for PWM inverters

Graphical Data:
The document includes several graphs illustrating:

Peak on-state voltage vs. peak on-state current
Maximum power dissipation vs. mean on-state current
Maximum junction to case thermal impedance vs. time
Gate characteristics at various temperatures

These graphs provide visual insights into the performance and thermal characteristics of the modules under different conditions.

Catalog excerpts

Thyristor - Diode Modules MFC135 MFA135 MFK135 MFX135-1

Thyristor - Diode Modules MFC135 MFA135 MFK135 MFX135 Features：  Isolated mounting base 3000V~ Pressure contact technology with IT(AV) VDRM/VRRM ITSM I2t Increased power cycling capability Space and weight savings AC/DC Motor drives Various rectifiers VALUE SYMBOL TEST CONDITIONS 180 half sine wave 50Hz Single side cooled, Tc=85C Mean on-state current VDRM VRRM Repetitive peak off-state voltage Repetitive peak reverse voltage VDRM&VRRM tp=10ms VDSM&VRSM= VDRM&VRRM+100V respectively IDRM IRRM Repetitive peak current Surge on-state current 10ms half sine wave VR=60%VRRM Threshold voltage On-state slop resistance Peak on-state voltage Critical rate of rise of off-state voltage Critical rate of rise of on-state current Gate trigger current Gate trigger voltage IH VGD Rth(j-c) Rth(c-h) Viso Fm Holding current Non-trigger gate voltage Thermal resistance Junction to case Thermal resistance case to heat sink Isolation voltage Single side cooled Single side cooled Thermal connection torque (M5) Stored temperature

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Thyristor - Diode Modules MFC135 MFA135 MFK135 MFX135-2

Max . junction To case0.20 Thermai Impedance Vs.Time MTC135高压 Peak On-state Voltage Vs.Peak On-state Current 0.25 Transient thermal impedance,°C/W Iinstantaneous on-state voltage,volts 100 1000 Instantaneous on-state currant,amperes Max . case Temperature Vs.Mean MTC135 高压 On-state Current Case temperature,°C MTC135高压 Max . Pow er Dissipation Vs.Mean On-state Current 180 120 Conduction Angle Fig.4 Max . case Temperature Vs.Mean On-state Current MTC135高压 MTC135高压 Max . Pow er Dissipation Vs.Mean On-state Current 140 Conduction Angle Conduction Angle Mean on-state current,amperes

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Thyristor - Diode Modules MFC135 MFA135 MFK135 MFX135-3

Surge Current 3.6 Vs.Cycles Total peak half-sine surge current,kA Fig.8 Gate Trigger Zone at varies temperature 2.5V,150MA Gate characteristic at 25°C junction temperature MFK(DT) MFX(DT)

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