Thyristor - Diode Modules MFC1200 MFA1200 MFK1200 MFX1200 Features：  Isolated mounting base 2500V~ Pressure contact technology with IT(AV) VDRM/VRRM ITSM I2t Incrtased power cycling capability  Space and weight savings Typical Applications：  AC/DC Motor drives Various rectifiers VALUE SYMBOL TEST CONDITIONS 180 half sine wave 50Hz Single side cooled,Tc=85C Mean on-state current VDRM VRRM Repetitive peak off-state voltage Repetitive peak reverse voltage IDRM IRRM Repetitive peak current VDM= VDRM VRM= VRRM Surge on-state current 10ms half sine wave , VR=0.6VRRM On-state slop resistance Peak on-state voltage Critical rate of rise of off-state voltage Critical rate of rise of on-state current ITM =2400A, Gate source 1.5A tr ≤0.5μs Repetitive Gate trigger current Gate trigger voltage IH VGD Rth(j-c) Rth(c-h) Viso Fm Holding current Non-trigger gate voltage Thermal resistance Junction to case Thermal resistance case to heatsink Isolation voltage Single side cooled Single side cooled Stored temperature

Peak On-state Voltage Vs.Peak On-state Current MTC1200风泠 Max . junction To case Thermai Impedance Vs.Time 0.031 Transient thermal impedance,°C/W Iinstantaneous on-state voltage,volts 1000 10000 100000 Instantaneous on-state currant,amperes Max . case Temperature Vs.Mean MTC1200 风 On-state Current 140 Conduction Angle Conduction Angle Fig.4 Max . case Temperature Vs.Mean On-state Current MTC1200风 MTC1200 风 Max . Pow er Dissipation Vs.Mean On-state Current Conduction Angle MTC1200Vs.Mean 风 Max . Pow er Dissipation On-state Current Conduction Angle

Surge Current 34 Vs.Cycles Total peak half-sine surge current,kA Fig.8 Gate Trigger Zone at varies temperature 3 V,200MA Gate characteristic at 25°C junction temperature Outline: MFA(TD) MFK(DT) MFX(DT)