EOQ-BBO Optoelectronics & Engineering Services BBO Pockels Cell HIGHLIGHTS APPLICATIONS • High Repetition Rate • High repetition rate DPSS Q-Switch • High peak power damage resistance • High repetition rate Regenerative Amplifier control • Low absorption • Cavity Dumping • UV Transmission • Beam Chopper • Low Acoustic Noise APPLICATION The EOQ-BBO series Pockels cells are transverse field devices. The low electrooptical coefficient of BBO results in high operating voltages. The quarter-wave voltage is proportional to the ratio of electrode spacing and crystal length. As a result, a smaller aperture device has lower quarter-wave voltage. However, even for 3mm aperture devices quarter-wave voltage is as high as 3.4KV@1064nm. A double crystal design is available in order to reduce required voltages and allowing operation in half-wave mode with fast switching times. EOQ-BBOdejh.doc PRINCIPLE OF OPERATION BBO is one of the electro-optic material choices for high average power pockels cell applications. BBO has significant advantages over other materials in terms of laser power handling abilities, temperature stability, and substantial freedom from piezoelectric ringing. Because it relies on the electro optic effect, switching time - aided by the low capacitance of the Pockels cell is very fast. The wide transparency range of BBO allows it to be used in diverse applications. Artifex Engineering Bollwerkstr. 17A 26725 Emden, Germany Tel: +49-(0)4921-450-9360 Fax: +49-(0)4921-450-9365 mail: [email protected] http://www.afx-eng.com

ABSOLUTE MAXIMUM RATINGS Damage Threshold > 500 MW / cm2 @1064nm, 10ns Voltage Damage Threshold 7kV SPECIFICATIONS Specifications Description Description Model Number EOQ-BBO-1 EOQ-BBO-2 Design single crystal double crystal Aperture Diameter 2.5 2.5 Quarter-Wave Voltage@ 1064 nm 3.4kV 1.8kV Extinction ratio >500:1 >500:1 Optical Transmission >98% >98% Wavefront Distortion@ 1064 nm < λ/8 < λ/8 Typical Capacitance < 3pf < 6pf Outline dimension φ25.4 × 44mm φ25.4 × 60mm Wavelength range 200-3000nm 200-3000nm 1/4 WAVE VOLTAGE VS WAVELENGTH

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