Overview: The PhE-VADE is a state-of-the-art ellipsometer designed for nondestructive characterization of thin films and bulk materials. It offers high precision and fast measurement speeds, making it suitable for in-situ process monitoring and control across various substrates, including transparent, metallic, and semiconductor materials.
Key Features:- High signal-to-noise ratio and fast measurement speed of less than 1 second.
- Wide variable angle range from 20 to 90 degrees for determining film thickness and optical constants.
- Multiwavelength operation with options for wavelengths such as 470 nm, 532 nm, 543 nm, 594 nm, 612 nm, 633 nm, 1064 nm, and 1150 nm.
- Powerful software with a comprehensive library of material optical constants and advanced data analysis capabilities.
- High stability and reproducibility with measured angle accuracy better than 0.01 degrees.
- Auto-focus feature to compensate for sample topography and misalignment.
Specifications:- Thickness range for transparent and absorbing films: 0 - 6000 nm.
- Angle of incidence range: 20 - 90 degrees with 5-degree steps and accuracy of +/- 0.01 degrees.
- Refractive index accuracy: 0.001.
- Film thickness accuracy: +/- 0.005 nm for 100 nm SiO2 on silicon.
- Measurement time: 1 second.
- Sample stage: Wafer chuck up to 200 mm diameter with tilt and height adjustments.
- Standard wavelength: 632.8 nm, with optional wavelengths available upon request.
Software and Analysis:- Integrated data acquisition and analysis software with full materials library.
- 2D and 3D display views for data visualization.
- Capability to simulate experimental data and provide fitting parameter values with 90% confidence.
- Advanced features for graphic manipulation and data output functions.
Upgrade Options:- Micro spot analysis for sample areas smaller than 50 microns by 50 microns.
- Mapping option for analyzing sample areas with small lateral dimensions.
See more