PeWgRSIH Single Phase Rectifier Bridge PSB 25T IdAVM ~ 21 APSB 25TN Vrrm = 1200 V to 2200 V Vrsm v Symbol Test Conditions IdAVM Tc = 63"C per module Ifsm Tvj = 45 C, Vr = 0 V t = 10 ms Tvjm Tstg Symbol Test Conditions Ir Vr = Vrrm Tvj = 25C Vr = Vrrm Tvj = Tvjm Vto For power-loss calculations only Rth(j-c) per diode; DC current per module Rth(j-s) per diode; DC current per module ds Creeping distance on surface a Maximum allowable acceleration Features • %” gold- or nickel-plated FASTON terminals • Isolation voltage 3000 V~ • Mesa glass-passivated chips • Blocking voltage up to 2200 V • Low forward voltage drop • UL registered E 148688 Applications • Supplies for DC power equipment • Input rectifiers for PWM inverters • Battery DC power supplies • Field supply of DC motors Advantages • Easy to mount with one screw • Space and weight savings • Improved temperature and power cycling capability Package style and outline Data according to lEC 60747 refers to a single diode unless otherwise stated [email protected] ©2013 POWERSEM reserves the right to change limits, test conditions and dimensions v1.00 Competitive sensor & power supply solutions worldwide

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