Power Device Capacitance Analyzer Data Sheet Automatically evaluate all power device capacitance parameters (including Ciss, Coss, Crss, and Rg) under a wide range of operating voltages to improve power device and power electronics circuit design performance • Measure transistor input, output and reverse transfer capacitances (Ciss, Coss, Crss, Cies, Coes, Cres) at high bias voltages • Measure independent terminal capacitances (Cgs, Cgd, Cds, Cge, Cgc, Cce) • Measure capacitances for normally-on devices such as SiC JFET or GaN FET • Measure internal gate resistance (Rg) • Measure capacitance continuously as the gate voltage varies from negative to positive • Easy to switch back and forth between leakage tests and capacitance measurements • Wide operation voltage bias up to +/-3 kV • Easy to use and fully automated measurement

With the increasing use of power devices fabricated from emerging new materials such as SiC and GaN, switching power supplies are operating at increasingly higher frequencies. This makes accurate device capacitance characterization more important than ever before. The B1507A Power Device Capacitance Analyzer meets this need, providing a complete solution for the evaluation of power device capacitance (such as input, output, and reverse transfer capacitances). The B1507A can help power device development engineers maximize product value and performance by revealing detailed device characteristics....

Key Specifications of B1507A Key Specification Max bias Capacitance measurement Frequency range Capacitance range Collector / Drain channel Gate channel Measurement parameters Characteristics Capacitance characteristics Device Capacitance Ciss, Coss, Coss_eff, Crss, Cgs, Cgd, Cds, Cies, Coes, Cres, Cge, Cgc, Cce, Gate Resistance Gate leakage current Igss, Iges Output leakage current Idss, Ices Breakdown voltage BVds, BVces Threshold voltage Static characteristics

Capacitance measurement specifications B1507A capacitance measurement is achieved using the combination of an MFCMU module in the B1507A mainframe and the built-in device capacitance selector in the B1507A test fixture. 100 kO at SMU bias output resistance Voltage drop compensation function is available. Bypass capacitance in the capacitance selector Capacitance Withstand voltage Drain to Source Terminal 1 uF ±3000V Gate to Source Terminal 1 uF ±100V Measurement accuracy for 2-terminal device (Supplemental characteristics) Accuracy of this supplemental characteristics is defined at the output...

Measurement accuracy for 3-terminal device (Supplemental characteristics) Accuracy of the following supplemental characteristics is defined at the output terminals inside the test fixture. Condition AC level: 30 mV rms, Dx < = 0.1 (Dx: Measurement value of D) Cgs measurement accuracy 3-terminal Cgs:Cds:Cgd= 1:1:1 1.E-06 1.E-07 Cgs measurement accuracy 3-terminal Cgs:Cds:Cgd= 1:0.1:0.01 1.E-06 1.E-07

Cds measurement accuracy 3-terminal Cgs:Cds:Cgd = 1:1:1 1.E-06 1.E-07 Cds measurement accuracy 3-terminal Cgs:Cds:Cgd = 1:0.1:0.01 1.E-06 1.E-07

Cgd measurement accuracy 3-terminal Cgs:Cds:Cgd = 1:1:1 1.E-06 1.E-07 Cgd measurement accuracy 3-terminal Cgs:Cds:Cgd = 1:0.1:0.01 1.E-06 1.E-07

Ciss measurement accuracy 3-terminal Cgs:Cds:Cgd = 1:1:1 1.E-06 1.E-07 Ciss measuremet value (F) Ciss measurement accuracy 3-terminal Cgs:Cds:Cgd = 1:0.1:0.01 1.E-06 1.E-07 Ciss measuremet value (F)

Coss measurement accuracy 3-terminal Cgs:Cds:Cgd = 1:1:1 1.E-06 1.E-07 Coss measuremet value (F) Coss measurement accuracy 3-terminal Cgs:Cds:Cgd = 1:0.1:0.01 1.E-06 1.E-07 Coss measuremet value (F)

Output terminals for 3-terminal device Parameter Name Definition of 3-terminal device capacitances Symbol Description Cgs Capacitace between Base/Gate terminal and Emitter/Source terminal Cds Capacitace between Collector/Drain terminal and Emitter/Source terminal Cgd Capacitace between Base/Gate terminal and Collector/Drain terminal Crss Capacitace between Base/Gate terminal and Collector/Drain terminal Ciss Capacitace between Base/Gate terminal and Emitter/Source terminal and capacitance between Base/Gate terminal and Collector/Drain terminal Coss Capacitace between Collector/Drain terminal...

Current/Voltage measurement specifications Current/Voltage measurement is achieved using the MPSMU module connected to Gate/Base terminal. The HVSMU module is connected to Drain/Collector terminal. The GNDU is connected to Source/Emitter terminal. MPSMU Gate Output Specifications Voltage range, resolution, and accuracy (high resolution ADC) Voltage Force Measure Force accuracy 1 range resolution resolution ±(% + mV) Maximum current 1. ± (% of reading value + offset value in mV) 2. 100 mA (Vo ≤ 20 V), 50 mA (20 V < Vo ≤ 40 V), 20 mA (40 V < Vo ≤ 100 V), Vo is the output voltage in Volts. Current...

Current range, resolution, and accuracy (high speed ADC) Current Force Measure Force accuracy 1 range resolution resolution ±(% + A + A) ±1 nA 3 ±10 nA 3 ±100 nA 3 ±1 µA 3 ±10 µA ±100 µA ±1 mA ±10 mA ±100 mA 1. ±(%of reading value + xed offset in A + proportional offset in A), Vo is the output voltage in V.) 2. 100 V (Io ≤ 20 mA), 40 V (20 mA < Io ≤ 50 mA), 20 V (50 mA < Io ≤ 100 mA), Io is the output current in Amps. 3. Supplemental characteristics Power consumption Voltage source mode: Voltage range Power MPSMU measurement and output range 0.5 V 20 x Ic (W) 2V 20 x Ic (W) 5V 20 x Ic (W) 20...

HVSMU Drain Output Specifications Voltage range, resolution, and accuracy Voltage Force Measure range resolution resolution Maximum current Maximum voltage 1. ±(% of reading value + offset voltage V) Current range, resolution, and accuracy Current Force Measure range resolution resolution ±10 nA 3 ±100 nA 3 ±1 µA 3 ±10 µA ±100 µA ±1 mA ±10 mA 1. ±(%of reading value + xed offset in A + proportional offset in A), Vo is the output voltage in V.) 2. Output current needs to be set at a value greater than the current shown in the table. 3. Supplemental characteristics Power consumption Voltage source...