Step Voltage (Max) 3 kV Step Voltage (Min) 500 V Peak-to-Peak Voltage 5 kV eVoS MEAsymmetric bias waveform generator for direct control of substrate voltage and ion energy The eVoS™ ME asymmetric bias waveform generator is designed to achieve direct control of wafer-surface voltage and resulting ion energy distributions (IED) in plasma-based etch and deposition processes. The eVoS system comprises an agile high voltage power supply combined with innovative asymmetric waveform generating technology to establish and control wafer surface potential. The asymmetric output of the eVoS eliminates the limitations and restrictions of wafer biasing inherent to sinusoidal RF bias applications. Fast digital metrology and novel control algorithms enable the production of near mono-energetic IEDs. ■ Ability to produce near mono-energetic ion energy distributions 6 A ■ Pulse capability with necessary input and output signals for synchronization ■ Direct switch-module integration replaces existing RF matching networks ■ Real-time bias voltage and ion current feedback via high-speed metrology ■ Adaptablility to standard chamber interface BENEFITS ■ Direct control of wafer bias voltage and resulting ion energies ■ Reduced power through use of the “right power,” only delivering the useful ion energy ■ Significantly increased etch selectivity for shorter processes and straighter, deeper features ■ Enhanced ion energy selection/discrimination compared to RF bias methods ©2023 Advanced Energy Industries, Inc.

TECHNICAL DATA Switch Module For international contact information visit advancedenergy.com. [email protected] +1 970 221 0108 Specifications are subject to change without notice. Not responsible for errors or omissions. ©2023 Advanced Energy Industries, Inc. All rights reserved. Advanced Energy®, eVoSTM, and AE® are U.S. trademarks of Advanced Energy Industries, Inc. Advanced Energy PRECISION | POWER | PERFORMANCE | TRUST