Advanced Energy eVoS LE Asymmetric bias waveform generator for direct control of substrate voltage and ion energy The eVoS™ LE is an asymmetric bias waveform generator designed to achieve direct control of wafer-surface voltage and resulting ion energy distributions (IED) in plasma-based etch and deposition processes. The eVoS system is comprised of a bi-directional voltage supply combined with an independent current source to establish and control wafer-surface potential. The asymmetric output of the eVoS eliminates the limitations and restrictions of wafer biasing inherent to sinusoidal RFbias application. Fast digital metrology and novel control algorithms enable the production of near mono-energetic lEDs. FEATURES ■ Ability to produce near mono-energetic ion energy distributions ■ Pulse capability with necessary input and output signals for synchronization ■ Integrated design and compact size eliminates need for matching network ■ High-speed metrology provides real-time bias voltage and ion current feedback ■ Adaptable to standard chamber interface BENEFITS ■ Achieve direct control of wafer bias voltage and resulting ion energies ■ Use less power by using the “right power,” only delivering the useful ion energy ■ Gain enhanced ion energy selection/discrimination when compared to a RF bias method Ion Energy U p to 1 keV Ion Current Up to 1 Amp IED Spread FWHM < ± (larger of) 20 V or 10% across specified Vstep/lcomp range Pulse Range 1 to 5000 Hz!® 10% -90% duty factor (Minimum pulse Interval (on or off time) = 100 ps) ©2021 Advanced Energy Industries, Inc.

TECHNICAL DATA Advanced Energy For international contact information, visit advancedenergy.com. [email protected] +1 970 2210108 PRECISION | POWER | PERFORMANCE Specifications are subject to change without notice. Not responsible for errors or omissions. ©2021 Advanced Energy Industries, Inc. All rights reserved. Advanced Energy®, eVoS™,and AE®are U.S. trademarks of Advanced Energy Industries, Inc.