Catalogs >
ADI >
ADL8104

ADL8104
23Pages

Catalog excerpts

Wideband, High Linearity, Low Noise Amplifier, 0.4 GHz to 7.5 GHz ADL8104 Data Sheet FUNCTIONAL BLOCK DIAGRAM Test instrumentation Military communications Single positive supply (self biased) High OIP2: 52 dBm typical at 0.6 GHz to 7.5 GHz High gain: 15 dB typical at 0.6 GHz to 6 GHz High OIP3: 32 dBm typical Low noise figure: 3.5 dB typical at 0.4 GHz to 6 GHz RoHS-compliant, 3 mm × 3 mm, 16-lead LFCSP GENERAL DESCRIPTION The ADL8104 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise, wideband, high linearity amplifier that operates from 0.4 GHz to 7.5 GHz. The ADL8104 provides a typical gain of 15 dB at 0.6 GHz to 6 GHz, a 3.5 dB typical noise figure at 0.4 GHz to 6 GHz, a 20 dBm typical output power for 1 dB compression (OP1dB) at 0.6 GHz to 6 GHz, and a typical output third-order intercept (OIP3) of 32 dBm at 0.6 GHz to 6 GHz, requiring only 150 mA from a 5 V drain supply voltage. The low noise amplifier has a high output second-order intercept (OIP2) of 52 dBm typical at 0.6 GHz to 6 GHz, making the ADL8104 suitable for military and test instrumentation applications. The ADL8104 also features inputs and outputs that are internally matched to 50 Ω. The RFIN and RFOUT pins are internally ac-coupled and the bias inductor is also integrated, making the ADL8104 ideal for surface-mounted technology (SMT)-based, high density applications. The ADL8104 is housed in an RoHS-compliant, 3 mm × 3 mm, 16-lead LFCSP. Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 ©2020 Analog Devices, Inc. All rights reserved. Technical Support www.analog.c

Open the catalog to page 1

Data Sheet REVISION HISTORY 9/2020—Revision 0: Initial Version

Open the catalog to page 2

Data Sheet SPECIFICATIONS 0.4 GHz TO 0.6 GHz FREQUENCY RANGE VDD = 5 V, total supply current (IDQ) = 150 mA, RBIAS = 90.9 Ω, and TA = 25°C, unless otherwise noted. Table 1. Parameter FREQUENCY RANGE GAIN Gain Variation over Temperature NOISE FIGURE RETURN LOSS Input Output OUTPUT OP1dB Saturated Output Power (PSAT) OIP3 OIP2 POWER ADDED EFFICIENCY (PAE) Test Conditions/Comments Measurement taken at output power (POUT) per tone = 5 dBm Measurement taken at POUT per tone = 5 dBm Measured at PSAT 0.6 GHz TO 6 GHz FREQUENCY RANGE VDD = 5 V, IDQ = 150 mA, RBIAS = 90.9 Ω, and TA = 25°C, unless...

Open the catalog to page 3

ADL8104 Parameter OUTPUT OP1dB PSAT OIP3 OIP2 PAE Test Conditions/Comments Measurement taken at POUT per tone = 5 dBm Measurement taken at POUT per tone = 5 dBm Measured at PSAT DC SPECIFICATIONS Table 4. Parameter SUPPLY CURRENT IDQ Drain Current (IDD) RBIAS Current (IRBIAS) SUPPLY VOLTAGE VDD

Open the catalog to page 4

Data Sheet ABSOLUTE MAXIMUM RATINGS ELECTROSTATIC DISCHARGE (ESD) RATINGS Table 5. Parameter VDD RF Input Power Continuous Power Dissipation (PDISS), TA = 85°C (Derate 22.57 mW/°C Above 85°C) Temperature Storage Range Operating Range Peak Reflow (Moisture Sensitivity Level 3 (MSL3))1 Junction to Maintain 1,000,000 Hours Mean Time to Failure (MTTF) Nominal Junction (TA = 85°C, VDD = 5 V, IDQ = 150 mA) 1 The following ESD information is provided for handling of ESD-sensitive devices in an ESD protected area only. Human body model (HBM) per ANSI/ESDA/JEDEC JS-001. Table 7. ADL8104, 16-Lead...

Open the catalog to page 5

Data Sheet PIN CONFIGURATION AND FUNCTION DESCRIPTIONS NOTES 1. NO CONNECT. THESE PINS ARE NOT CONNECTED INTERNALLY. THESE PINS MUST BE CONNECTED TO THE RF AND DC GROUND. 2. EXPOSED PAD. THE EXPOSED PAD MUST BE CONNECTED TO THE RF AND DC GROUND. Mnemonic GND RFIN NC RFOUT VDD RBIAS EPAD Description Ground. The GND pin must be connected to the RF and dc ground. See Figure 6 for the interface schematic. RF Input. The RFIN pin is ac-coupled and matched to 50 Ω. See Figure 4 for the interface schematic. No Connect. These pins are not connected internally. These pins must be connected to the RF...

Open the catalog to page 6

Data Sheet TYPICAL PERFORMANCE CHARACTERISTICS 15 GAIN AND RETURN LOSS (dB) Figure 7. Gain and Return Loss vs. Frequency, 0.01 GHz to 12 GHz, VDD = 5 V, IDQ = 150 mA, RBIAS = 90.9 Ω (S22 Is the Output Return Loss, S21 Is the Input Return Loss, and S11 Is the Gain) Figure 10. Gain and Return Loss vs. Frequency, 0.1 GHz to 1 GHz, VDD = 5 V, IDQ = 150 mA, RBIAS = 90.9 Ω 18 Figure 8. Gain vs. Frequency for Various Temperatures, 0.3 GHz to 1 GHz, VDD = 5 V, IDQ = 150 mA, RBIAS = 90.9 Ω Figure 11. Gain vs. Frequency for Various Temperatures, 1 GHz to 10 GHz, VDD = 5 V, IDQ = 150 mA, RBIAS = 90.9...

Open the catalog to page 7

Data Sheet Figure 13. Gain vs. Frequency for Various RBIAS and IDQ Values, 0.3 GHz to 1 GHz, VDD = 5 V INPUT RETURN LOSS (dB) Figure 14. Input Return Loss vs. Frequency for Various Temperatures, 0.3 GHz to 1 GHz, VDD = 5 V, IDQ = 150 mA, RBIAS = 90.9 Ω Figure 17. Input Return Loss vs. Frequency for Various Temperatures, 1 GHz to 10 GHz, VDD = 5 V, IDQ = 150 mA, RBIAS = 90.9 Ω 0 INPUT RETURN LOSS (dB) INPUT RETURN LOSS (dB) INPUT RETURN LOSS (dB) Figure 16. Gain vs. Frequency for Various RBIAS and IDQ Values, 1 GHz to 10 GHz, VDD = 5 V Figure 15. Input Return Loss vs. Frequency for Various...

Open the catalog to page 8

Data Sheet Figure 20. Output Return Loss vs. Frequency for Various Temperatures, 0.3 GHz to 1 GHz, VDD = 5 V, IDQ = 150 mA, RBIAS = 90.9 Ω OUTPUT RETURN LOSS (dB) OUTPUT RETURN LOSS (dB) Figure 23. Output Return Loss vs. Frequency for Various Temperatures, 1 GHz to 10 GHz, VDD = 5 V, IDQ = 150 mA, RBIAS = 90.9 Ω 0 OUTPUT RETURN LOSS (dB) OUTPUT RETURN LOSS (dB) Figure 22. Input Return Loss vs. Frequency for Various RBIAS and IDQ Values, 1 GHz to 10 GHz, VDD = 5 V Figure 19. Input Return Loss vs. Frequency for Various RBIAS and IDQ Values, 0.3 GHz to 1 GHz, VDD = 5 V Figure 21. Output Return...

Open the catalog to page 9