Product catalog 2014
36Pages

High power semiconductors Product catalog 2014 Power and productivity for a better world™

Product catalog 2014 edition

IGBT and diode dies 2-3 Integrated gate-commutated thyristors 8-9 Gate turn-off thyristors 10-11 Fast recovery diodes 12-13 Standard recovery diodes 14 Drawings for fast & standard recovery diodes and avalanche diodes 16 Phase control thyristors 18 - 20 Bi-directionally controlled thyristors 21 Fast switching thyristors 22 Reverse conducting thyristors 23 Silicon surge voltage suppressors 24 BiMOS part numbering structure 25 Bipolar part numbering structure 26 - 27 ABB - Polovodice products cross reference list 28 - 29 Product catalog I Contents 01

IGBT and diode dies Benefits - Highest performance per rated amp due to moderate chip shrinkage allowing efficient deheating - Operation temperatures up to T vj = 175°C thanks to the novel SPT ++ technology - Low gate drive power consumption because of the very low gate charge of SPT + and SPT ++ Features - SPT (Soft Punch Through) and its improved versions with lower losses (SPT + and SPT ++) are the state-of-the-art ABB planar IGBT technologies paired with its matching fast diodes - High dynamic ruggedness, low switching losses and low on-state losses - Passivation: Silicon nitride plus...

Part number Max. dies per wafer (W) or tray (T) * contact factory ** not for new designs Please refer to page 25 for part numbering structure. Product catalog | IGBT and diode dies 03

HiPak modules 1.7kV – 6.5kV Benefits - Highest reliability thanks to matched AlSiC base plates and AlN ceramics - Compliant with latest international Fire & Smoke standards - Enhanced design margins thanks to very high Safe Operating Area Features - High power, industry standard package - Low inductance, high current terminals - High thermal cycling capabilities - Low thermal resistance - Smooth switching characteristics for good EMC - SPT and SPT + chip technology - High insulation capabilities up to 10.2 kV - New epoxy free housings coming this year as 1:1 drop-in replacement for existing...

Configuration / Outline Part number Tvj(operational) up to 125°C 4.5 kV 5SNG 0150P450300 New * contact factory Please refer to page 25 for part numbering structure. Product catalog | HiPak modules 05

06 HiPak modules | Product catalog

StakPak modules Benefits - Ease of stack design thanks to high tolerance for uneven mounting pressure - Stable shorted state in case of failure - Easy series connection Features - Press-pack IGBT - High SOA - Explosion resistant package - Different IGBT-to-diode chip area ratios available Part number IGBT-to-diode ratio Dimensions in mm Please refer to page 25 for part numbering structure. Product catalog | StakPak modules 07

Integrated gate-commutated thyristors Benefits - Integrated gate driver with optical interface - Highest power density and low on-state losses Features - Optical trigger input and status feedback - Fast response and precise timing - Cosmic radiation resistance rating - AC square wave or DC supply input - Low-inductance, hermetically sealed housing Part number Asymmetric IGCTs - optimized for snubberless turn-off - contact factory for series connection Part number Reverse conducting IGCTs 5SHX 08F4510 GCT Diode part 5SHX 26L4520 GCT Diode part 5SHX 06F6010 GCT Diode part 5SHX 10H6010 GCT...

1] Free space for he at sink 1| Free space for heatsinh Fast recovery diode recommendation For all asymmetric and reverse conducting IGCTs, ABB offers matching freewheeling, neutral point (NPC) and clamp diodes. The actual choice of the diode depends on the specific application. Please see application note 5SYA 2064, Applying fast recovery diodes. Product catalog I IGCTs 09

Gate turn-off thyristors Benefits - Broad product portfolio with proven field reliability - Spare and replacement parts for most applications available Features - Excellent trade-off between on-state and switching losses - Cosmic radiation resistance rating - Hermetically sealed package Part number Asymmetric with buffer layer Fine Pattern Type 5SGF 30J4502 Part number VDRM, VRRM Please refer to page 26 for part numbering structure. 10 Gate turn-off thyristors | Product catalog

Coaxial cable 2/1mm2 ETFE Coaxial cable 3/3.5mm2 ETFE Coaxial cable 3/3.5mm2 ETFE Soldered connectors Soldered connectors Fast recovery diode recommendation For all GTO types, ABB offers matching freewheeling and snubber diodes. The actual choice of the diode depends on the specific application. Please see application note 5SYA 2064, Applying fast recovery diodes. Product catalog | Gate turn-off thyristors 11

Fast recovery diodes Benefits - Broad range of fast diodes optimized for a variety of applications Features - Optimized for fast and soft turn-off - Small reverse recovery charge - High di/dt capability at turn-off - Range optimally suited for GTO and IGCT applications - Cosmic radiation resistance rating - Hermetically sealed package Part number Part number ** = VRRM / 100V Drawings see page 16. Please refer to page 27 for part numbering structure. 12 Fast recovery diodes | Product catalog

Part number Part number Snubber diodes IGCT diodes ABB Semiconductors has a long history of producing high power fast recovery diodes for applications such as Voltage Source Converters (VSC), Current Source Converters (CSC) and DC Snubbers. The diodes are typically used in combination with IGCTs and GTOs as free-wheeling diodes, snubber diodes and clamp diodes. Fast recovery diode recommendations for various applications can be found in the ABB application note 5SYA 2064, Applying fast recovery diodes. Product catalog | Fast recovery diodes 13

Standard recovery diodes Benefits - Broad range of rectifier diodes optimized for highcurrent rectifiers - Also available for parallel connection Features - Optimized for line frequency - Low on-state losses - High current handling capabilities - Hermetically sealed package Drawings see page 16. Please refer to page 27 for part numbering structure. 14 Standard recovery diodes | Product catalog