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InAsSb photovoltaic detector arrays P15742 series

InAsSb photovoltaic detector arrays P15742 series
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InAsSb photovoltaic detector arrays P15742 series 16, 46 element array capable of detecting up to 5 μm band The P15742 series is one-dimensional InAsSb photovoltaic detector array in a ceramic DIP (dual inline package). They have a back-illuminated structure that achieves low crosstalk. These are environmentally friendly infrared detectors that do not use lead, mercury, or cadmium, which are substances restricted by the RoHS Directive. High sensitivity Infrared spectrophotometry Themperature measurement Remote sensing Structure Parameter Number of elements Element size Element pitch Package Window material Absolute maximum ratings (Ta=25 °C, unless otherwise noted) Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Topr Tstg *1: When there is a temperature difference between a product and the surrounding area in high humidity environments, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C, per element) Parameter Peak sensitivity wavelength Cutoff wavelength Photosensitivity Shunt resistance Detectivity Rise time Terminal capacitance Noise equivalent power Note: Uniform irradiation on the entire photosensitiv

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InAsSb photovoltaic detector arrays P15742 series - 2

InAsSb photovoltaic detector arrays Shunt resistance vs. chip temperature (Typ. Ta=25 °C) Shunt resistance Crosstalk characteristics P15742-016DS (Typ. Ta=25 °C, λ=1.55 µm, VR=0 V, light spot size: approx. 10 m) (Typ. Ta=25 °C, λ=1.55 µm, VR=0 V, light spot size: approx. 10 m) Relative sensitivity (%) Relative sensitivity (%) Position on photosensitive area (µm) Position on photosensitive area (µm) KIRDB0708EA

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InAsSb photovoltaic detector arrays P15742 series - 3

InAsSb photovoltaic detector arrays Dimensional outlines (unit: mm) Dimensional outlines (unit: mm) Index mark Photosensitive area Chip position accuracy with respect to package center X, Y≤±0.3, θ≤±3° Dimensional outlines (unit: mm) Window material Photosensitive surface Photosensitive area Index mark Chip position accuracy with respect to package center X, Y≤±0.3, θ≤±3° 4±1

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InAsSb photovoltaic detector arrays P15742 series - 4

InAsSb photovoltaic detector arrays Details of photosensitive area (unit: mm) Note: KC: cathode (common), other than cathode: anode

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InAsSb photovoltaic detector arrays P15742 series - 5

InAsSb photovoltaic detector arrays Recommended soldering conditions Solder temperature: 260℃ (5 s or less, once) Solder the leads at a point at leat 1.5mm away from the package body. Note: When you set soldering conditions, check that problems do not occur in the product by testing out the conditions in advance. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Safety consideration ∙ Compound opto-semiconductors (photosensors, light emitters) Information described in this material is current as of January 2021. Product specifications are subject to change...

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