Modules - Modules, IGBT - DC Collector Current 100 A and above - VISHAY - #1

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Document Number: 94362 For technical questions, contact: indmodules@vishay.com www.vishay.com Revision: 03-May-10 1 "Half-Bridge" IGBT INT-A-PAK (Standard Speed IGBT), 200 A GA200HS60S1PbF Vishay High Power Products FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Very low conduction losses • Industry standard package • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level BENEFITS • Increased operating efficiency • Direct mounting to heatsink • Performance optimized as output inverter stage for TIG welding machines PRODUCT SUMMARY VCES 600 V IC DC 480 A VCE(on) at 200 A, 25 °C 1.13 V INT-A-PAK ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage VCES 600 V Continuous collector current IC TC = 25 °C 480 A TC = 116 °C 200 Pulsed collector current ICM 800 Peak switching current ILM 800 Gate to emitter voltage VGE ± 20 V RMS isolation voltage VISOL Any terminal to case, t = 1 minute 2500 Maximum power dissipation PD TC = 25 °C 830 W TC = 85 °C 430 ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage VBR(CES) VGE = 0 V, IC = 1 mA 600 - - Collector to emitter voltage VCE(on) V VGE = 15 V, IC = 200 A - 1.13 1.21 VGE = 15 V, IC = 200 A, TJ = 125 °C - 1.08 1.18 Gate threshold voltage VGE(th) IC = 0.25 mA 3 4.5 6 Collector to emitter leakage current ICES VGE = 0 V, VCE = 600 V - 0.025 1 mA VGE = 0 V, VCE = 600 V, TJ = 125 °C - - 10 Gate to emitter leakage current IGES VGE = ± 20 V - - ± 250 nA