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| | | SERIES PVI-2TE | | 2-12 urn IR PHOTOVOLTAIC DETECTORS THERMOELECTRICALLY COOLED OPTICALLY IMMERSED | | |
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| | | 1.0E+1?- | | |
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| | | 5PVI-2TE-3 | | |
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| | | PVI-2TE-4 -1- PVI-2TE-5 .PVI-2TE-6 fpVI-2TE-8 | | |
| | | 1.0E+1' E | | |
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| | | 1.0E+10 | | |
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| | | PVI-2TE-10.6 | | |
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| | | 1 .OE+9 | | |
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| | | 1 .OE+8 | | |
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| | | □ FEATURES - High performance in the 2-11 |xm range without LN-cooling! - Fast response - No flicker noise - Convenient to use - Wide dynamic range - Compact, rugged and reliable - Low cost - Prompt delivery - Custom design upon request | | ■ DESCRIPTION The PVI-2TE-n (where n is wavelength A,op, in manufacturer of micrometers, to which the detector is optimized) series photodetectors are two-stage TE-cooled IR photovoltaic detectors, which have been optically immersed to high refractive index GaAs (or CdZnTe) hyperhemispherical (standard) or hemispherical (option) lenses. These devices can be optimized for the maximum performance anywhere within 2 to 11 um range. High performance and stability were achieved by using a variable gap (Hg,Cd,Zn)Te semiconductors, optimized doping and improved surface processing. Custom devices with quadrant cells, multielement arrays, various immersion lenses, windows and optical filters are available on request. Standard detectors are available in modified TO-8 packages with BaF2 windows. Other packages, windows and connectors specifications are available upon request. See application notes for more details. Multiple cells connected in series are preferable for large area devices. They are characterized by similar D*, larger parallel resistance and lower Rj. | | |
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| | | ■ SPECIFICATION | | |
| | | @20°C | | |
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| | | | | | | | | | | | | | | | CHARACTERISTICS | UNITS | PVI-2TE-3 | PVI-2TE-4 | PVI-2TE-5 | PVI-2TE-6 | PVI-2TE-8 | PVI-2TE-10.6 | | | | | urn | | 4 | | 6 | 8 | 10.6 | | | | Detectivity*: | | | | | | | | | | | atApeak | cmHz1/2/W | >2*10n | >6401C | >3-10lc | >2-1010 | >5-109 | >3*109 | | | | atAop | | >1.5*10n | >5*1010 | >2>1010 | >1-1010 | >2-109 | >1«109 | | | | Responsivity | A/W | >1.2 | >1.3 | >1.3 | >1.2 | >1 | >0.7 | | | | Response time** | ns | <15 | <20 | <20 | <10 | <7 | <3 | | | | Parallel resistance-optical area product | | >100 | >30 | >4 | >0.60 | >0.1 | >0.01 | | | | Operating temperature | K | | | 220 to 240 | | | | | | Acceptance angle, F# | oeg | | | 35, 1.65 | | | | | | | | | | | | | | | | | |
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| | | * Data sheet states minimum D* values for each detector model. Higher performance detectors can be provided upon request. | | |
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| | | | | | | | | | | | | | | | ** Faster response may be achieved at reverse bias and with lugh-frequency-optimized devices. See application notes for more details. | | | | Type | | | | | 0.025 0.05 0.1 0.2 | 0.25 | 0.5 | 1 | 2 | 3 | 4 | | | | PVI-2TE-3 | | X | X | X | X* | | | | | | PVI-2TE-4 | X | X | X | X | X | | | | | | PVI-2TE-5 | X | X | X | X | X* | | | | | | PVI-2TE-6 | X | X | X | X | X | | | | | | PVI-2TE-8 | X | X | X | X | | | | | | | PVI-2TE-10.6 | X | X | X | | | | | | | | | | | | | | | | | | | |
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| | | ' Devices may require reverse polarization in order to increase dynamic resistance. ^ HEADQUARTERS 3 Swietlikow St., 01-389 Warsaw, POUVND tel.: +48 22 666 01 45 | | |
| | | SALES OFFICE 11a Wyki St., 01-318 Warsaw, POLAND tel.: +48 22 666 14 10 fax: +48 22 665 21 55 info@vigo.com.pl | | |
| | | UKAS MANAGEMENT | | |
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| | | | emB | | | |
| | | a SGS | | |
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| | | i S.a. fax: +48 22 666 01 59 http://www.vigo.com.pl | |
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| | | AR, 13.03.07 | | |
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