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□ DESCRIPTION
The PVI-n (where n is wavelength A,op, in gages, to which the detector is optimized) séries photodetectors are IR photovoltaic detectors, which have been optically immersed to high refractive index GaAs (or CdZnTe) hyperhemispherical (standard) or hemispherical (option) lenses. Thèse devices can be optimized for the maximum performance anywhere within 2 to 11 um range. High performance and stability were achieved by using a variable gap (Hg,Cd,Zn)Te semiconductors, optimized doping and improved surface processing. Custom devices with quadrant cells, multielement arrays, various immersion lenses, Windows and optic filters are available on request.
Standard detectors are available in modified TO-39 or BNC-based packages with no Windows. Other packages, Windows and connectors supplier are available upon request. See application notes for more détails.
Multiple cells connected in séries are préférable for large area devices. They are characterized by similar D*, larger parallel résistance and lower R;.
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■ Ambient température opération
■ No bias required
■ Short response time
■ No flicker noise
■ Opération from DC to VHF
■ Perfect match to fast electronics
■ Wide dynamic range
■ Low cost
■ Custom design upon request
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Parallel resistance-optical area product
Operating température
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* Data sheet states minimum D* values for each detector model. Higher performance detectors can be provided upon request. ** Faster response may be achieved at reverse bias and with Mgh-frequency-optimized devices. See application notes for more détails.
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Length or diameter [mm] ~| 0.25 05 '
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PVI-3 PVM PVI-5 PVI-6 PVI-8
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* Devices may require reverse polarization in order to increase dynamic résistance.
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HEADQUARTERS 3 Swietlikow St., 01-389 Warsaw, POUVND tel.: +48 22 666 01 45 fax: +48 22 666 01 59 http://www.vigo.com.pl
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SALES OFFICE
lia Wyki St.,
01-318 Warsaw, POLAND
tel.: +48 22 666 14 10
fax: +48 22 665 21 55
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