Catalogue IR Detectors Catalog (VIGO System)
www.vigo.com.pl
print switch display
Page / 35
VIGO System - 5200, 5826
/ 35
See other catalogues for VIGO System
Text version of the page
temperature. Both a room temperature and TE cooled devices are offered. TE cooled gives better performance but it is also more bulky and needs appropriate handling. For more details on TE cooling see the chapter on TE Cooling and Cooler Controllers.
Optical Area: A
It is an area where the incident radiant power is collected. For rectangular devices it is a contact width(w)-length(l) product where length is a distance between contacts.
Optimum Wavelength: ^,opt
The wavelength for which a device was optimized for. For near IR detectors Xopt is close to A^eak. In contrast, for uncooled long wavelength detectors Xopt can be even larger then Xco. For example the A,opt=10.6 um detector has
\,eak=610 7
Peak Wavelength: ^peak
^peak *s a point where a specified device has a maximum response.
Photocurrent: Iph
The current signal from a photovoltaic device when exposed to incident radiant power. It is described by photovoltaic current equation:
I ph=r)QADe-g where:
r| is the quantum efficiency,
Q is the number of incident photons,
AD is the active area,
e is the electron load,
g is the photoelectric gain
Photoelectric Gain: g
The parameter describing the photocurrent gain due to special construction of photoconductors. In photovoltaic devices g it is close to 1.
Photoelectromagnetic Devices (PEM)
Photovoltaic devices that employ a photoelectromagnetic effect based on spatial separation of the optically generated electron and holes in the magnetic field. They do not require electrical bias and show no flicker noise. The devices are typically used as fast uncooled detectors of the long wavelength radiation.
Photoconductive Devices (PC)
Photon IR detectors based on photoconductive effect. They conductivity is changed by incident radiation power by generating additional charge carriers.
Photovoltaic Devices (PV)
Photovoltaic devices (photodiodes) are semiconductor structures with p-n junction or more complex heterojunctions. Absorbed photons produce electron-hole pairs resulting in external circuit as photocurrent. Reverse bias is frequently applied to improve high frequency performance. PV devices are typically faster then PCs. There are usually more fragile than photoconductors.
Resistance - Area Product
In typical photodiodes (PV series) a resistance decreases proportionally to their area. Therefore the normalize resistance can be expressed as the R - A product. In contrast the PVM series devices are characterized by the constant sheet resistance.
Response Time: t
t is time that takes a detector with zero bias to reach 1/e of the initial value of the signal after switching off the irradiation. It is related to the cut-off frequency (fc):
1
T =
2-n-fc
Responsivity: S
The electrical output for given IR input.
where Y is the detector output and X is the radiation input. It is described as function of the wavelength S(A,)
Series Resistance: Rs
Parasitic resistance in photodiode. It's contribution to the total diode resistance may be significant to long wavelength and operating at near room temperatures especially for large area.
Sheet Resistance
The measure of the resistance of the very thin regions; expressed in ohm/square. It is used to normalize the resistance for devices with non-square active area.
Shunt Resistance: Rsh
The resistance of the photovoltaic detector biased with zero or with the very small voltage (e.g. ±10 mV), when not exposed to any radiation (dark state). Also referred to as dynamic impedance at zero bias.
Spectral Response
It is often understood as a spectral responsivity or a spectral detectivity. In detector data sheet it is presented as the D*(A,). It can be characterized by cut-off wavelength, optimum wavelength, peak wavelength.
Voltage Responsivity:
Voltage signal
Incident power
Voltage responsivity is typically used to characterize photoconductors, photoelectromagnetic and in some cases photovoltaic devices.
Voltage Responsivity - Width Product
The voltage responsivity of PC detectors decreases with the width. Therefore the normalize voltage responsivity can be expressed as the Rv - w product.
The voltage responsivity of PVM detectors decreases with the width similar as in PC devices. Therefore the normalize voltage responsivity can be expressed as the Ry - w product.
Quantum Efficiency r\:
The ratio of the incident photons' number to the number of resulting generated electron-hole pairs.
Infrared detectors from VIGO System S.A.
DirectIndustry's Virtual Technical Library: PDF Catalogue | Technical Documentation | Brochure | Manual | Industrial directory | Specifications | Characteristics
Search Go
page 1 p.1
page 2 p.2
page 3 p.3
page 4 p.4
page 5 p.5
page 6 p.6
page 7 p.7
page 8 p.8
page 9 p.9
page 10 p.10
page 11 p.11
page 12 p.12
page 13 p.13
page 14 p.14
page 15 p.15
page 16 p.16
page 17 p.17
page 18 p.18
page 19 p.19
page 20 p.20
page 21 p.21
page 22 p.22
page 23 p.23
page 24 p.24
page 25 p.25
page 26 p.26
page 27 p.27
page 28 p.28
page 29 p.29
page 30 p.30
page 31 p.31
page 32 p.32
page 33 p.33
page 34 p.34
page 35 p.35