The PVMI-n (where n is wavelength A,
op, in micrometers, to which the
detector is optimized) series photodetectors are multiple heterojunction photovoltaic IR
detectors, which have been optically immersed to high refractive index GaAs (or CdZnTe) hyperhemispherical (standard) or hemispherical (option) lenses. These devices especially useful as large area
detectors operating within 8 to 12 um range. High performance and stability were achieved by using a variable gap (Hg,Cd,Zn)Te semiconductors, optimized doping and improved surface processing. Custom devices with quadrant cells, multielement arrays, various immersion lenses, windows and optical filters are available on request.