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| | | SERIES PVI | | 2-11 fim IR PHOTOVOLTAIC DETECTORS OPTICALLY IMMERSED | | |
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| | | 1.0E+11 | | |
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| | | 1.0E+10 | | |
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| | | 1 .OE+9 | | |
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| | | 1.0E+8 | | |
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| | | 1 .OE+7 | | |
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| | | □ FEATURES | | □ DESCRIPTION The PVI-n (where n is wavelength A,op, in micrometers, to which the detector is optimized) series photodetectors are IR photovoltaic detectors, which have been optically immersed to high refractive index GaAs (or CdZnTe) hyperhemispherical (standard) or hemispherical (option) lenses. These devices can be optimized for the maximum performance anywhere within 2 to 11 um range. High performance and stability were achieved by using a variable gap (Hg,Cd,Zn)Te semiconductors, optimized doping and improved surface processing. Custom devices with quadrant cells, multielement arrays, various immersion lenses, windows and optical filters are available on request. Standard detectors are available in modified TO-39 or BNC-based packages with no windows. Other packages, windows and connectors are available upon request. See application notes for more details. Multiple cells connected in series are preferable for large area devices. They are characterized by similar D*, larger parallel resistance and lower R;. | | |
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| | | ■ Ambient temperature operation ■ No bias required ■ Short response time ■ No flicker noise ■ Operation from DC to VHF ■ Perfect match to fast electronics ■ Wide dynamic range ■ Low cost ■ Custom design upon request | | |
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| | | ■ SPECIFICATION | | |
| | | @20°C | | |
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| | | | | | | | | | | | | | | CHARACTERISTICS | UNITS | PVI-3 | PVI-4 | PVI-5 | PVI-6 | PVI-8 | | | | | pm | | | | | 8 | | | | Detectivity*: | | | | | | | | | | atApeak | cmHz1K/W | | | | | >3-108 | | | | atAop | | >1.5*1010 | >4*109 | >2*109 | >1-109 | >1.5*108 | | | | Responsivity | A/W | >1.2 | >1.3 | >1.3 | >1.2 | >1 | | | | Response time** | ns | <15 | <15 | <15 | <12 | <7 | | | | Parallel resistance-optical area product Operating temperature | frcm2 | >5 | >1 | >0.3 | >0.1 | >0.02 | | | | K | | | 300 | | | | | | Acceptance angle, F/# | deg, 1 | | | 35, 1.65 | | | | | | | | | | | | | | | | |
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| | | * Data sheet states minimum D* values for each detector model. Higher performance detectors can be provided upon request. ** Faster response may be achieved at reverse bias and with Mgh-frequency-optimized devices. See application notes for more details. | | |
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| | | Length or diameter [mm] ~| 0.25 05 ' | | |
| | | Type | | |
| | | 0.025 | | 0.05 | | 0.1 | | 0.2 | | |
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| | | PVI-3 PVM PVI-5 PVI-6 PVI-8 | | X X X X | | X X X X X* | | X X X | | X* If | | |
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| | | * Devices may require reverse polarization in order to increase dynamic resistance. | | |
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| | | SALES OFFICE 11a Wyki St., 01-318 Warsaw, POLAND tel.: +48 22 666 14 10 fax: +48 22 665 21 55 info@vigo.com.pl | | |
| | | HEADQUARTERS 3 Swietlikow St., 01-389 Warsaw, POLAND tel.: +48 22 666 01 45 fax: +48 22 666 01 59 http://www.vigo.com.pl | | |
| | | UKAS MANAGEMENT | | |
| | | SYSTEM ■ S.A. | | |
| | | a SGS | | |
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| | | AR, 03.09.07 26 | | |
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