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Solutions for Carbon Doping
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Solutions for Carbon Doping - 1

Solutions for Carbon Doping The Veeco Low Temperature Gas Source provides a low-cost means to introduce a source gas without thermal pre-cracking. The source features a large conductance tube for fast gas switching and a diffuser end plate for good growth uniformity. With advanced flux modeling, the end plate hole pattern is customized to the specific MBE system for optimal performance. A band heater, external to vacuum, heats the source to a temperature range (<200°C) sufficient to prevent condensation of gas in the tube, yet not high enough to promote cracking. To make efficient use of the source ports on an MBE system, this source may be combined on a single mounting flange with the Atomic Hydrogen Source, ora conical Dopant Source. For these combination sources, the gas injector does not include a separate band heater, but rather is heated by the source or hydrogen-cracking filament. The Veeco Low Temperature Gas Source is recommended for use with Veeco's Multi-Orifice CBr4 Gas Flow Control System for best performance. The system allows control of the introduction of CBr4 gas into an ultra-high vacuum (UHV) environment, utilizing CBr4 gas as a carbon dopant source. The system regulates the CBr4 gas using closed-loop pressure control and a series of pneumatically operated on/off valves to regulate the gas. It also incorporates interlocks to prevent equipment damage and ensure optima vacuum system performance. The Veeco CBr4 system includes two modes for selecting system states: LOCAL mode, using the touch screen on the CBr4 controller; or REMOTE, using Molly® Growth Control Software or other process control computersoftware using Modbus TCP. REMOTE state on automated systems is only available with version ECS1 Molly Software. Carbon is often a preferable p-type dopant, used to replace beryllium or zinc in GaAs materials, due to its low diffusion coefficient. While solid carbon sources have been found to provide useful doping into the mid 1 019crrr3 range, our gas source is much more versatile and reliable. It delivers CBr4 gas without exhibiting long-term memory effects, and is highly efficient—permitting doping densities into the 1 020crrr3 range with no evidence of any bromine incorporation. The Veeco Multi-Orifice CBr4 Gas Flow Control System simplifies the control of the gas through multiple, selectable valved orifices and gas pressure. CBr4 is an excellent choice as it is cracked at the heated substrate surface, eliminating the need for any thermal pre-cracking in the gas injector. is achieved reproducibly in InGaAs. The CBr4 source gas is delivered using the Veeco Gas Handling System. Data courtesy of Intelligent Epitaxy Statistical Summacy Number of Test Points Average Value Maximum value Minimum value Sample Spread (%) wafer uniformity value (%) Excellent carbon doping uniformity by resistivity measurements across a 4 system using the Low Temperature Gas Source for CBr4. This sample has a film thickness and hole mobility of Data courtesy of Intelligent Epitaxy thermal pre-cracking - More than 50 in the field - Efficient, controllable - Optional independent plumbing system converts substrate cleaning

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Solutions for Carbon Doping - 2

CBr4 Gas Flow Control System Specifications Solutions for a nanoscale world.™ Compound Semiconductor • MBE Operations 4900 Constellation Drive, St. Paul, MN 55127 USA © 2009 Veeco Instruments Inc. All rights reserved. (9-09) Molly is o registered trademark and Solutions for o nonoscole world is o trademark of Veeco.

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