Group: TOSHIBA
Catalog excerpts
Small and Medium Diodes SEMICONDUCTOR & STORAGE PRODUCTS
Open the catalog to page 1Small and Medium Diodes Recently, many products ranging from computers and home appliances to automobiles and industrial equipment have been driving the need for effective solutions to reduce size and weight. Semiconductor requirements differ from application to application. Take power supplies for example, which are being required to accommodate higher capacity in smaller dimensions. This increases the temperature at which systems are operated. To address this problem, Toshiba offers an extensive portfolio of small, high-efficiency diodes, including Schottky barrier diodes (SBDs) featuring...
Open the catalog to page 21. Key Features 1 Schottky Barrier Diodes (SBDs) ▼ ▼ ▼ Schottky Barrier Diodes (SBDs) Voltage rating: Current rating: Peak forward voltage: (Shown only as examples) 2 Rectification Diodes (Diodes for General Rectification and Reverse-Current Protection) Voltage rating: Current rating: Diodes with high ESD performance are available. 3 Super-Fast-Recovery Diodes (S-FRDs) ▼ ▼ ▼ Super-Fast-Recovery Diodes (S-FRDs) Voltage rating: Current rating: High-speed switching: Reverse recovery time (trr) 4 High-Efficiency Diodes (HEDs) ▼ ▼ ▼ High-Efficiency Diodes (HEDs) Voltage rating: Current rating:...
Open the catalog to page 32. Product Lineup Surface-Mount Package Trend for Diodes Toshiba has been working to develop the most compact surface-mount packages which allow communication equipment to be miniaturized. (Ta = 25°C) Footprint and Thermal Resistance Glass-epoxy board: Board size = 50 mm , Solder land = 6 mm (Except L-FLAT ) ■ Internal Structure of FLAT Packages Chip Epoxy resin The FLAT packages feature reduced wire inductance and resistance and an enhanced thermal property compared to wire-bonded packages. FLAT Package Series US-FLATTM Ultra-Small Flat Package Typical product: CUS01, CUS10I30A Small Flat...
Open the catalog to page 4► SMALL & MEDIUM DIODES Schottky Barrier Diodes (SBDs) O: Based on AEC-Q101 *: Designed for strobe discharge applications. ♦: Dual *: High ESD protection
Open the catalog to page 5► SMALL & MEDIUM DIODES Super-Fast-Recovery Diodes (S-FRDs) and High-Efficiency Diodes (HEDs) ► Super-Fast-Recovery Diodes (S-FRDs)
Open the catalog to page 64. Product Characteristics Schottky-Barrier Diodes (SBDs) with Improved Trade-Off Toshiba now offers small to medium Schottky barrier diodes (SBDs) fabricated with a next-generation process. Owing to low peak forward voltage (VFM) and low peak repetitive forward voltage (IRRM) characteristics, these SBDs provide low power loss, help reduce the size and improve the power efficiency of mobile handsets, switching power supplies, etc., thereby improving their overall performance. Voltage rating: VRRM = 30 V, 40 V Current rating: IF(AV) = 1 A to 3 A Tradeoff Relationship between the Forward...
Open the catalog to page 74.1 Schottky Barrier Diodes (SBDs) Voltage rating: Current rating: Available in surface-mount packages. Single Package
Open the catalog to page 8Single Package Marking US-FLATTM S1 Cathode mark Cathode mark Cathode mark Cathode mark
Open the catalog to page 94.2 Rectification Diodes (Diodes for General Rectification and Reverse-Current Protection) Voltage rating: Current rating: Available in surface-mount packages. Single Package Part Number Absolute Maximum Ratings IF(AV) (A) IFSM (A) Tj (˚C) 150 15 0.7 Electrical Characteristics (Max) IRRM (μA) VFM (V) @IFM (A) 10 : Based on AEC-Q101 ★: High ESD protection ✽: Designed for strobe discharge applications Dual Package Part Number Absolute Maximum Ratings IF(AV) (A) IFSM (A) Tj (˚C) Electrical Characteristics (Max) IRRM (μA) VFM (V) @IFM (A) Note: IF(AV), IFSM, IRRM and VFM are specified per...
Open the catalog to page 10Super-Fast-Recovery Diode (S-FRDs) Voltage rating: Current rating: High-speed switching: Reverse recovery time (trr) ≤ 100 ns (1) Super-Fast-Recovery Diodes (S-FRDs) Single Package Absolute Maximum Ratings Electrical Characteristics (Max) VRRM (V) IF(AV) (A) IFSM (A) Tj (˚C) Tstg (˚C) IRRM (μA) VFM (V) @IFM (A) trr (ns) Conditions 800 Cathode mark
Open the catalog to page 11High-Efficiency Diode (HEDs) Voltage rating: Current rating: High-speed switching: Reverse recovery time (trr) ≤ 35 ns or ≤ 50 ns Available in surface-mount packages. (2) High-Efficiency Diodes (HEDs) Single Package Absolute Maximum Ratings Electrical Characteristics (Max) VRRM (V) IF(AV) (A) IFSM (A) Tj (˚C) Tstg (˚C) IRRM (μA) VFM (V) @IFM (A) trr (ns) Conditions 200 Cathode mark Cathode mark
Open the catalog to page 12VZ = 6.2 V to 390 V Power dissipation: P = 0.7 W, 1.0 W, 2.0 W (S-FLATTM and M-FLATTM packages) Temperature Coefficient Forward Reverse Zener Characteristics Voltage of Zener Voltage Current Dynamic Measurement Measurement Measurement Zener Voltage VF αT IR Resistance Current Current Voltage VZ (V) (mV/˚C) (V) (μA) rd (Ω) IZ IF VR (mA) (A) (V) Min Typ. Max Max Typ. Max Max Max 5.6 6.2 6.8 7.4 8.2 9.0 9.9 10.8 11.7 13.5 14.4 16.2 18.0 19.8 21.6 24.3 27.0 29.7 32.4 35.1 38.7 42.3 Zener Characteristics Power Part Number Dissipation (W) Temperature Coefficient Forward Reverse Voltage of Zener...
Open the catalog to page 134. Product Characteristics CMZB12 Series (M-FLATTM) Power Part Number Dissipation (W) Zener Characteristics Temperature Coefficient Forward Reverse of Zener Voltage Voltage Measurement Current Measurement Dynamic Measurement Zener Voltage αT VF IR Resistance Current Current Voltage VZ (V) (mV/˚C) (V) (μA) rd (Ω) IZ IF VR (mA) (A) (V) Min Typ. Max Max Typ. Max Max Max Cathode mark Cathode mark Cathode mark
Open the catalog to page 145. Application Examples and Toshiba’s Recommended Diodes Notebook PCs DC-DC Converter DC-DC Reverse-Current Protection Load Switch Battery Charger Applications Reverse-battery and reverse-current protection DC-DC converters Package US-FLATTM S-FLATTM M-FLATTM S-FLATTM M-FLATTM Automotive MOSFET Gate Protection Circuit Reverse-Battery Protection ECU Switching Circuit Flywheel Diode Surge Absorber Applications Reverse-battery and reverse-current protection Surge absorbers Flywheeling MOSFET gate protection Package S-FLATTM M-FLATTM S-FLATTM M-FLATTM S-FLATTM M-FLATTM S-FLATTM M-FLATTM
Open the catalog to page 156. Packaging and Packing Information 6.1 Surface-Mount Packages US-FLATTM Package dimensions Land pattern dimensions for reference only Package dimensions Packing quantities: Reel dimensions Land pattern dimensions for reference only Packing quantities:
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