Ku-Band Microwave Products - Toshiba America Electronics Components - #1

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Product Brief Ku-Band Microwave Products Highlights • Implemented in Toshiba’s Heterojunction Field Effect Transistors (HFET) process technology, ideal for high power microwave devices • Employs Toshiba’s cutting edge ion implantation technology to enable development of highest power output FETs • Devices available in versions from 9-watt to 30-watt, featuring power output from 32.5 decibels relative to 1 milliwatt (dBm) at frequency ranges of 8.5 GHz to 15.0 gigahertz (GHz) • Gain ranges from 7.5A dB (typ.) for the TIM8596-2 to 5.5A dB (typ.) for the TIM1414-30L; drain current ranges 0.85A (typ.) to 10.0A (typ.) Technology Toshiba Corp. (Toshiba)* is a leading supplier of high performance microwave devices based on a gallium arsenide (GaAs) semiconductor technology. Stateof- the-art technologies employed in the manufacturing process include e-beam deep submicron pattering, high energy ion implantation, and plated heat sinks. Through innovation and continuous improvement in circuit design, wafer fabrication, packaging and assembly. Toshiba America Electronic Components, Inc. (TAEC)**, sales and marketing representative in the Americas, delivers products with the high quality, reliability and performance available to satisfy your most demanding design. Ku-Band Microwave Products 1 Products Toshiba has a broad product line of power gallium arsenide field effect transistor (GaAs FETs) within the C, X and Ku frequency bands. These products address the high power infrastructure markets of wireless communications as well as both the subscriber and infrastructure segments of broadband fixed wireless access. Specific supported applications include wireless local area network (WLAN), multichannel multipoint distribution system (MMDS), fixed wireless access (FWA), terrestrial radio, very small aperture terminal (VSAT), satellite earth station and radar. Toshiba's 30W TIM1414-30L is the highest power device of its class currently offered for www.Toshiba.com/taec POUT vs. Frequency Map X/Ku-Band For Earth Station Application 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 Frequency — GHz 50 48 46 44 42 40 38 36 34 32 30 100 10 1.0 Output Power at 1 dB Gain Compression — dBm Output Power at 1 dB Gain Compression — W TIM1314-9L TIM1011-15L TIM1314-30L TIM1011-15L TIM1314-30L TIM1314-9L Frequency 10.7–11.7 GHz 13.75–14.5 GHz 13.75–14.5 GHz P1 dB (typ.) 42.0 dBm 45.0 dBm 39.5 dBm G1 dB (typ.) 7.0 dB 5.0 dB 6.0 dB IDS (typ.) 4.5A 10.0A 3.0A IM3 (min.) –42 dBc (min.) –25 dBc (min.) –25 dBC (min.) (S.C.L. @ 30.0 dBm) (S.C.L. @ 38.0 dBm) (S.C.L. @33.0 dBm)