Group: TOSHIBA
Catalog excerpts
Product Brief C-Band Microwave Products Highlights • Implemented in Toshiba’s Heterojunction Field Effect Transistors (HFET) process technology, ideal for high power microwave devices • Employs Toshiba’s cutting edge ion implantation technology to enable development of highest output FETs • Devices available in versions from 4-watts to 80-watts, featuring power output from 36.5 dBm to 49 dBm relative to 1 milliwatt (dBm) at frequency ranges of 3.3 GHz to 8.5 gigahertz (GHz) • Gain ranges from 12.5 dB (typ.) for the TIM3438-12UL and -16SL to 6.0dB for the TIM7785- 30SL, -35SL, -45SL and - 60SL; drain current ranges 1.1A (typ.) to 13.2A (typ.) Technology Toshiba Corp. (Toshiba)* is a leading supplier of high performance microwave devices based on a gallium arsenide (GaAs) semiconductor technology. Stateof- the-art technologies employed in the manufacturing process include e-beam deep submicron pattering, high energy ion implantation, and plated heat sinks. Through innovation and continuous improvement in circuit design, wafer fabrication, packaging and assembly. Toshiba America Electronic Components, Inc. (TAEC)**, sales and marketing representative in the Americas, delivers products with the high quality, reliability and performance available to satisfy your most demanding design. C-Band Microwave Products 1 Products Toshiba has a broad product line of power gallium arsenide field effect transistor (GaAs FETs) within the C, X and Ku frequency bands. These products address the high power infrastructure markets of wireless communications as well as both the subscriber and infrastructure segments of broadband fixed wireless access. Specific supported applications include wireless local area network (WLAN), multichannel multipoint distribution system (MMDS), fixed wireless access (FWA), terrestrial radio, very small aperture terminal (VSAT), satellite earth station and radar. www.Toshiba.com/taec POUT vs. Frequency Map 50 48 46 44 42 40 38 36 34 32 30 100 10 1.0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 Frequency — GHz Output Power at 1 dB Gain Compression — dBm Output Power at 1 dB Gain Compression — W TIM5359-80SL TIM6472-60SL TIM7785-60SL TIM6472-60SL TIM7785-60SL TIM5359-80SL Frequency 6.4–7.2 GHz 7.7–8.5 GHz 5.3–5.9 GHz P1 dB (typ.) 48.0 dBm 48.0 dBm 49.0 dBm G1 dB (typ.) 7.5 dB 6.0 dB 7.5 dB IDS (typ.) 13.2A 13.2A 18.0A IM3 (min.) –42 dBc (min.) –42 dBc (min.) –25 dBC (min.) (S.C.L. @ 36.5 dBm) (S.C.L. @ 36.5 dBm) (S.C.L. @42.0 dBm)
Open the catalog to page 1C-Band Microwave Products All trademarks are of their respective manufacturer and may be registered in certain jurisdictions. © Copyright 4/2007 TAEC www.Toshiba.com/taec FREQUENCY RF PERFORMANCE SPECIFICATIONS (TA = 25°C) @VDS = 10V Rth(c-c) PACKAGE BAND PART NUMBER P1dB (dBm) G1dB (dB) IDS (A) ÄG (dB) add(%) IM3 (dBc) (°C/W) TYPE (GHz) MIN. TYP. MIN. TYP. TYP. MAX. MAX. TYP. MIN. TYP. MAX./TYP. TIM5964-4SL-422 35.5 36.5 8.0 — 1.1 1.3 0.6 35 –42œ –45œ 6.5/4.5 2-11D1B TIM5964-8SL-422 38.5 39.5 8.0 — 2.2 2.8 0.6 35 –42 –45 3.8/2.5 2-11D1B 5.85–6.75 TIM5964-16SL-422 41.5 42.5 8.0 — 4.4 5.0...
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