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XP161A1355PR

ETR1124_001

Power MOSFET

GENERAL DESCRIPTION

The XP161A1355PR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible.

APPLICATIONS FEATURES

Low On-State Resistance : Rds (on)= 0.05 @ Vgs = 4.5V

Notebook PCs

: Rds (on)= 0.07 @ Vgs = 2.5V

Cellular and portable phones

: Rds (on)= 0.15 @ Vgs = 1.5V

On-board power supplies

Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage

Li-ion battery systems

: 1.5V N-Channel Power MOSFET DMOS Structure Small Package : SOT-89

PIN CONFIGURATION PIN ASSIGNMENT

PIN PIN NUMBER NAME FUNCTION 1 G Gate 2 D Drain 3 S Source

EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS

Ta = 25
PARAMETER SYMBOL RATINGS UNITS Drain-Source Voltage Vdss 20 V Gate-Source Voltage Vgss 8 V Drain Current (DC) Id 4 A Drain Current (Pulse) Idp 16 A Reverse Drain Current Idr 4 A Channel Power Dissipation * Pd 2 W Channel Temperature Tch 150 Storage Temperature Range Tstg -55~150 * When implemented on a ceramic PCB

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