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TS4148 RYG 400mW High Speed SMD Switching Diode - Taiwan Semiconductor
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TS4148 RYG 400mW High Speed SMD Switching Diode - Taiwan Semiconductor


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TS4148 RYG 400mW High Speed SMD Switching Diode Small Signal Diode ..Extremely thin/leadless package ..High mounting capability,strong surage with stand, high reliability. ..Pb free version and RoHS compliant ..Case :0805 standard package, molded plastic Min Max Min Max 1.80 2.20 0.071 0.086 1.05 1.45 0.041 0.057 0.25 0.65 0.010 0.026 0.75 0.95 0.030 0.037 1.30 0.90 0.051 0.034 Package 0805 Maximum Ratings Electrical Characteristics Reverse Breakdown Voltage (Note 2) Forward Voltage IF= 10mA VR= 20V VR= 75V Junction Capacitance VR=0, f=1.0MHz Reverse Recovery Time (Note3) Notes:1. Valid provided that electrodes are kept at ambient temperature Notes:2. Test Condition : IR=100..A Notes:3. Test Condition : IF=10mA, IR=1mA,RL=100.. Dimensions Ordering Information Part No. Packing C E A B nA ..A 300 Value 400 5 A Units mW V ..Halogen free Power Dissipation Symbol TS4148 RYG 5Kpcs / 7" Reel Repetitive Peak Forward Current ..Polarity : Indicated by cathode band ..Weight : 0.006 gram (approximately) IFRM Non-Repetitive Peak Reverse Voltage VRSM Rating at 25°C ambient temperature unless otherwise specified. 100 V ..Designed for mounting on small surface. Non-Repetitive Peak Forward Surge Current Mean Forward Current 25 1.00 Thermal Resistance (Junction to Ambient) (Note 1) Repetitive Peak Reverse Voltage PD VRRM Type Number 0805 Maximum Ratings and Electrical Characteristics Features Mechanical Data ..Terminal: Gold plated, solderable per MIL-STD-750, method 2026 guaranteed Unit (mm) Unit (inch) D ..High temperature soldering guaranteed: 260°C/10s Trr ns - CJ 4.0 4 - IR pF Junction and Storage Temperature Range Reverse Leakage Current Min -65 to + 175 Type Number Symbol VF TJ, TSTG °C - - V 75 mA mA 0.5 2.0 °C/W Units V Max 375 IO 150 Tp=1sec square waveform V(BR) IFSM 8.3ms single half sine waveform R..JA 75 B A C E D Version : G11

pageCatalog pdf di En 2012-06-22-01