LS4148/LS4448/LS914B 500mW High Speed SMD Switching Diode - Taiwan Semiconductor - #1

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LS4148/LS4448/LS914B 500mW High Speed SMD Switching Diode Small Signal Diode ..Fast switching device(Trr<4.0nS) ..Surface device type mounting ..Moisture sensitivity level 1 ..Matte Tin(Sn) lead finish with Nickel(Ni) underplate ..Pb free version and RoHS compliant Min Max Min Max ..Case : QUADRO Mini-MELF Package (JEDEC DO-213) 3.30 3.70 0.130 0.146 ..High temperature soldering guaranteed : 270°C/10s 1.40 1.60 0.055 0.063 0.25 0.40 0.010 0.016 1.25 1.40 0.049 0.055 2.5Kpcs / 7" Reel Maximum Ratings Electrical Characteristics IR=100uA IR=5uA Forward Voltage LS4448, LS914B IF=5.0mA LS4148 IF=10.0mA LS4448, LS914B IF=100.0mA VR=20V VR=75V Junction Capacitance VR=0, f=1.0MHz Reverse Recovery Time (Note 2) Notes:1. Valid provided that electrodes are kept at ambient temperature Notes:2. Reverse Recovery Test Conditions: IF=IR=10mA, RL=100Ù, IRR=1mA LSxxxx L1 LSxxxx L0 Package QUADRO Mini-MELF QUADRO Mini-MELF Packing 10Kpcs / 13" Reel mW Rating at 25°C ambient temperature unless otherwise specified. Type Number Units PD Part No. 0.071 Ordering Information Junction and Storage Temperature Range Mean Forward Current IFM IO TJ, TSTG RèJA Non-Repetitive Peak Forward Current Thermal Resistance (Junction to Ambient) (Note 1) -65 to + 200 °C 450 150 300 °C/W V V mA mA ìA CJ Type Number Symbol 75 100 Reverse Breakdown Voltage 0.72 Trr ns 1.0 1.0 25 - 4.0 - Units - Reverse Leakage Current V VF IR V(BR) - - - Min Max nA V pF 0.62 - - 5.0 4.0 Symbol ..Weight : 29 ± 2.5 mg 75 D E 1.80 Repetitive Peak Reverse Voltage VRRM 500 100 Power Dissipation Non-Repetitive Peak Reverse Voltage Maximum Ratings and Electrical Characteristics Features Mechanical Data Unit (mm) Unit (inch) Dimensions A B C QUADRO Mini-MELF (LS34) ..Polarity : Indicated by cathode band Peak Forward Surge Current IFSM 2 A HERMETICALLY SEALED GLASS ..All External Surfaces are Corrosion Resistant and Leads are Readily Solderable Value VRSM C B A D E Version : C09