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High Voltage NPN Transistor - Taiwan Semiconductor


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TAIWAN
SEMICONDUCTOR
TS13005
High Voltage NPN Transistor
(R) RoHS
r COMPLIANCE TO-220 ITO-220
P in Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BVceo
400V
BVcbo
700V
Ic
4A
Vce(SAT)
1V @ IC / IB = 4A / 1A
Features
• High Voltage
• High Speed Switching
Structure
• Silicon Triple Diffused Type
• NPN Silicon Transistor
Ordering Information
Block Diagram
Part No.
Package
Packing
TS13005CZ C0
TO-220
50pcs / Tube
TS13005CI C0
ITO-220
50pcs / Tube
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
Vcbo
700V
V
Collector-Emitter Voltage
Vceo
400V
V
Emitter-Base Voltage
Vebo
9
V
Collector Current
DC
Ic
4
A
Pulse
8
Base Current
DC
Ib
2
A
Pulse
4
Total Power Dissipation
TO-220
Ptot
75
W
ITO-220
30
Operating Junction Temperature
Tj
+150
oC
Operating Junction and Storage Temperature Range
TsTG
- 55 to +150
Note: Single Pulse. PW = 300uS, Duty <2%
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Version: B07

pageCatalog pdf di En 2012-06-22-01