20V Dual N- Channel MOSFET - Taiwan Semiconductor - (Version JPG) - PDF Catalogue | Technical Documentation

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Bridge, Zener diode, Voltage regulator, MOSFET, Bipolar transistor

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TAIWAN

SEMICONDUCTOR

TSM3900D

20V Dual N-Channel MOSFET

RoHS

COMPLIANCE

PRODUCT SUMMARY

SOT-26

654

Pin Definition:

1.Gate1 6. Drain 1

2. Source 2 5. Source 1

3. Gate 2 4. Drain 2

1 23

Features

• Advance Trench Process Technology

• High Density Cell Design for Ultra Low On-resistance

Application

• Load Switch

• PA Switch

Ordering Information

Di O

Da o

1 O-1& ' ^k G₂

O-

s₂

Dual N-Channel MOSFET

Absolute Maximum Rating (Ta = 25°C unless otherwise noted)


Parameter		Symbol	Limit	Unit
Drain-Source Voltage		Vds	20	V
Gate-Source Voltage		Vgs	±8	V
Continuous Drain Current		Id	2	A
Pulsed Drain Current		I dm	8	A
Continuous Source Current (Diode Conduction)³'"		Is	1.6	A
Maximum Power Dissipation	Ta = 25°C	Pd	2.0	W
Maximum Power Dissipation	Ta = 70 °C	Pd	1.3	W
Operating Junction Temperature		Tj	+150	°C
Operating Junction and Storage Temperature Range		Tj, Tstg	-55 to+150	°C
Thermal Performance
Parameter		Symbol	Limit	Unit
Junction to CaseThermal Resistance		ROjc	30	°c/w
Junction to Ambient Thermal Resistance (PCB mounted)		ROja	80	°c/w

Notes:

a. Pulse width limited by the Maximum junction temperature

b. Surface Mounted on FR4 Board, t < 5 sec.

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Version: A07