10.0 A Surface Mount Schottky Barrier Rectifiers - Taiwan Semiconductor - (Version JPG) - PDF Catalogue | Technical Documentation

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Transistor, Schottky diode, Voltage reference, Voltage regulator, Zener diode

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MBRS1035- MBRS10150

10.0 AMPS. Surface Mount Schottky Barrier Rectifiers

D²PAK

TAIWAN

SEMICONDUCTOR

(K) RoHS

X^jr COMPLIANCE

^ I .045(1.141

Features

C45;i i-i:

■4- Plastic material used carries Underwriters

Laboratory Classifications 94V-0 ■4- Metal silicon junction, majority carrier conduction

* Low power loss, high efficiency

■> High current capability, low forward voltage drop ■> High surge capability

-> For use in low voltage, high frequency inverters, free wheeling, and poiarity protection applications

* Guardrtng for overvoltage protection

* High temperature soldering guaranteed: 260°C/10 seconds,0.25"{6.35mm)from case

*■ Green compound with suffix "G" on packing code & prefix "G" on datecode.

Mechanical Data_

* Cases: JEDEC DVAK molded plastic body

* Terminals: Pure tin plated, lead free, solderable per MIL-STD-750, Method 2026

■:- Polarity: As marked

+■ Mounting position: Any

■> Mounting torque: 5 in. - lbs. max

* Weight: 0.08 ounce, 2.24 grams

.tï?5fi MW 575 £14.6)

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PIN 1 p1n3

O-W-1 CASE 4

PIN2

Dimensions in Inches and (millimeters)

Marking Diagram

MBR10XX

Specific Device Code Green Compound Year

Work Week

Maximum Ratings and Electrical Characteristics

Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or Inductive load. For capacitive load, derate current by 20%


Type Number	Symbol	MBRS 1035	MBRS 1045	MBRS 1050	MBRS 1060	MBRS 1D90	MBRS 10100	MBRS 10150	Units
Maximum Recurrent Peak Reverse Voltage	Vrrm	35	45	50	60	90	100	150	V
Maximum RMS Vortage	Vrms	24	31	35	42	63	70	105	V
Maximum DC Blocking Voilage	Vrjc	35	45	50	60	90	100	150	V
Max-mum Average Fcrward Rectified Current See Fig. 1	l0w>	10							A
Peak Forward Surge Current, 6.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC rnetiicd 1	!fsm	120							A
Peak Repetitive Reverse Surge Current (Note 1)	I rr M	1	0	0.5					A
Maximum Instantaneous Forward Voltage at (Note 2) l_f=10A, Tc=25°C l_F=10A, Tc=125°C l_F=20A. Tc=25°C l_F=20A, Tc=125°C	Vf	Ü.67 0.84 0.72		0.80 0.70 0.96 0.85		0.S5 0.71		1.05	V
Maximum Instantaneous Reverse Current @ TJ =25 °C	i~	0.1					0.1		mA
at Rated DC Blocking Voltage (Note 2) @TJ=100"C	\|r	15		10			5 0		roA
Typical Junction capacitance	Cj	390		300		220			pF
Maximum Thermal Resistance, Junction Eo Case	R3JA ROJC	60 2.0							°c/w
Operating Junction Temperature Range	Tj	-65 to+175							^Dc
Storage Temperature Range	TsTG	-65 to +175							°c

1 2.0U5 Pulse Width, f=1.0 KHz

2. Pulse Test: 300us Pulse Width, 1% Duly Cycle.

Notes:

Version: C08

10.0 A Surface Mount Schottky Barrier Rectifiers - Taiwan Semiconductor - #1

Transistor, Schottky diode, Voltage reference, Voltage regulator, Zener diode