1.0 AMP. Fast Recovery Rectifiers - Taiwan Semiconductor - (Version JPG) - PDF Catalogue | Technical Documentation

See other catalogues for Taiwan Semiconductor

Switching regulator, Diode bridge, Transistor, Bipolar transistor, Diode

Text version of the page

FR101S-FR107S

1.0 AMP. Fast Recovery Rectifiers A-405

TAIWAN

SEMICONDUCTOR

(ß) RoHS

V_|__|jy COMPLIANCE

Features

1.0(25.4) MIN.

107(2 7) •Jo I /1., DIA.

-v- High efficiency, Low VF ❖ High current capability

High reliability -v* High surge current capability $ Low power loss. <• Green compound with suffix "G" on

packing code & prefix "G" on datecode.

Mechanical Data

.205 (5.2) ■66(4.7)

1.0(25.4) MIN

025 1.64t 021 (53) -■ DIA

❖ Cases: Molded plastic

❖ Epoxy: UL 94V-0 rate flame retardant -y- Lead: Pure tin plated, Lead free.,

solderable per MIL-STD-202, Method 208 guaranteed -y- Polarity: Color band denotes cathode

Dimensions in inches and (millimeters) Marking Diagram

FR10XS = Specific Device Code

FR10XS I SGY1

= Green Compound

= Year

end

WW - WorkWeek

❖ High temperature soldering guaranteed: 260°C/10 seconds/.375",(9.5mm) lead lengths at 5 lbs.,(2.3kg) tension

■> Weight: 0.22gram

Maximum Ratings and Electrical Characteristics

Rating at 25 "C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%


Type Number	Symbol	FR 101S	FR 102S	FR 103S	FR 104S	FR 105S	FR 106S	FR 107S	Units
Maximum Recurrent Peak Reverse Voltage	Vrrm	50	100	200	400	600	800	1000	V
Maximum RMS Voltage	Vrms	35	70	140	280	420	560	700	V
Maximum DC Blocking Voltage	Vdc	50	100	200	400	600	800	1000	V
Maximum Average Forward Rectified Current .375"{9.5mm) Lead Length @T_A = 55 °C	l(AV)	1.0							A
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method )	Ifsm	3Ü							A
Maximum Instantaneous Forward Voltage @ 1.0A	Vf	1.2							V
Maximum DC Reverse Current @ T_A=25 °C at Rated DC Blocking Voltage @ T_A=125°C	Ir	5.0 150							uA uA
Maximum Reverse Recovery Time ( Note 1 )	Trr	150 I 250 I 500							nS
Typical Junction Capacitance ( Note 2 )	Ci	10							P^F
Typical Thermal Resistance ( Note 3 )	Raw	90							"CM
Operating Temperature Range	Tj	-65 to +150							°C
Storage Temperature Range	IVrG	-65 to+150							°C

Notes: 1. Reverse Recovery Test Conditions: l_F=0.5A, l_R=1.0A, l_RR=0.25A

2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.

3. Mount on Cu-Pad Size 5mm x 5mm on P.C.B.

Version: B08

1.0 AMP. Fast Recovery Rectifiers - Taiwan Semiconductor - #1

Switching regulator, Diode bridge, Transistor, Bipolar transistor, Diode