I ndium Antimonide SH Sries Hall Sensors Description The SH sries Hall effect sensors are four terminal Indium Antimonide devices that are extremely sensitive to low magnetic fields. Th驨se devices produce an output voltage, Vh, proportional to the product of the input current, le, and the magnetic flux density, B. Features Low Cost Օ Indium Antimonide Very High Sensitivity Օ Low Current Requirement Choice of Mounting Configuration Models SH-400 SH-410 SH-420 /spթcifications units sh-400 sh-410 sh-420 Input rsistance, Rj Ohms 240 to 550 240 to 550 240 to 550 Output r鄩sistance, Rout ohms 240 to 550 240 to 550 240 to 550 Magnetic sensitivity, Vh (1) mVAG 292 to 1,120 290 to 1,760 100 to 330 Max. rsistive residual voltage, VM@B=0(1) ±mV 20 20 16 Max. control current @ 25"C, static air mA 20 20 20 Nominal control current, lcn mA 5 5 5 Mean temprature coefficient ofVH(0»Cto+40"C)(l) vc 驕1.8 1.8 Օ1.8 Mean temprature coefficient of rsistance (0°C to +40°C) (2) vc -1.8 -1.8 -1.8 Operating temp驩rature range c -40to+110 -40to+110 -40to +110 Storage tempթrature range c -40to+125 -40 to +125 -40to+125 Notes (1) Nominal Control Current, lcn=5 mA (2) Control Current=0.1 mA Rev. date 02/2006