Catalogs >
STMicroelectronics >
Rad-hard 4.5 A dual low-side MOSFET driver

Rad-hard 4.5 A dual low-side MOSFET driver
31Pages

Catalog excerpts

Rad-hard 4.5 A dual low-side MOSFET driver - 1

RHFPM4424 Rad-hard 4.5 A dual low-side MOSFET driver Datasheet - production data Applications • Switch mode power supply • DC-DC converters • Motor controllers • Line drivers Description Features • Wide operating voltage range: 4.5 V to 18 V • Parallel driving capability up to 9 A • Non-inverting configuration • Input 5 V logic level compatibility • 110 ns typical propagation delay • Matched propagation delays between the two channels (5 ns max.) • 20 mV maximum low level output voltage • 30 ns rise and fall times • +/-5 V common mode bouncing between signal and power grounds • TID: – 300 krad HDR – 100 krad LDR The RHFPM4424 is a flexible, high-frequency dual low-side driver specifically designed to work with high capacitive MOSFETs and IGBTs in a high radiation environment such as the aerospace. The RHFPM4424 outputs can sink and source 4.5 A of peak current independently. By putting in parallel the two PWM outputs, a higher driving current (up to 9 A peak) can be obtained. The RHFPM4424 works with CMOS/TTL compatible PWM signal so it can be driven by an external PWM controller, for instance the ST1843 or the ST1845. The hermetic FLAT-16 version has an industry standard pinout and it can dissipate up to 1.5 W (750 mW per channel), while FLAT-10 version optimizes the PCB real estate. Both of packages are hermetic, making the device wellsuited for any kind of harsh environment. • QML-V qualification planned • Hermetic package Order codes Engineering model Engineering model Temperature range Quality level EPPL Package 1. Contact ST sales office for information about the die specific conditions and for other quality levels. 2. Under development. December 2014 This is information on a product in full production.

Open the catalog to page 1

Rad-hard 4.5 A dual low-side MOSFET driver - 2

Typical application diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Total ionizing dose (MIL-STD-883 test method 1019) . . . . . . . . . . . . . . . .11 TID and HI results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 Device description and operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 7.1 7.2 Parallel output operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13...

Open the catalog to page 2

Rad-hard 4.5 A dual low-side MOSFET driver - 3

Date code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Documentation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

Open the catalog to page 3

Rad-hard 4.5 A dual low-side MOSFET driver - 5

Pin configuration Figure 2. Pin configuration (top view) Table 2. Pin description Pin Name Supply voltage. Bypass with low ESR (for example MLCC type) capacitor to the PCB ground plane. Ground reference for output drivers. Connect this pin to the PCB ground plane. Ground reference for PWM input pins. Input pin (PWM_1, PWM_2 and SGND) common mode can range +/-5 V versus PGND. PWM input signal (non-inverting) for driver 1 featuring TTL/CMOS compatible threshold and hysteresis. Don't leave the pin floating. PWM input signal (non-inverting) for driver 2 featuring TTL/CMOS compatible threshold...

Open the catalog to page 5

Rad-hard 4.5 A dual low-side MOSFET driver - 6

RHFPM4424 Table 2. Pin description (continued) Pin Name Low-side open drain pin of driver 2. Connect this pin to OUTH_2 either directly or by an external resistor if an asymmetric ON/OFF switching time is desired. Not connected pin. Leave it floating or connect it to any potential.

Open the catalog to page 6

Rad-hard 4.5 A dual low-side MOSFET driver - 7

Typical application diagram Typical application diagram Figure 3. Typical application diagram SGND and PGND can be shorted or decoupled up to +/-5 V. Figure 4. Typical application diagram as buck switching regulator SGND and PGND can be shorted or decoupled up to +/-5 V. In Figure 4, the output stage of the RHFPM4424 device directly drives an inductor; in this configuration, the RHFPM4424 output stages are in parallel to exploit the maximum current capability of the device. The MOSFET driver works as a synchronous buck converter.

Open the catalog to page 7

Rad-hard 4.5 A dual low-side MOSFET driver - 8

Absolute maximum ratings Absolute maximum ratings Table 3. Thermal data Value Symbol Max. thermal resistance, junction-to-case Maximum power dissipation @ Tamb = 70 °C Table 4. Absolute maximum ratings Symbol Supply voltage Power ground Signal ground Driver output DC output current (for each driver) Storage temperature Maximum operating junction temperature Lead temperature (soldering, 10 seconds)(1) ESD capability, human body model ESD capability, machine model 1. The distance is 1.5 mm far from the device body and the same lead is resoldered after 3 minutes.

Open the catalog to page 8

Rad-hard 4.5 A dual low-side MOSFET driver - 9

Electrical characteristics Electrical characteristics VCC = 4.5 V to 18 V and TJ = -55 to 125 °C, unless otherwise specified. Table 5. Electrical characteristics Test conditions Undervoltage lockout threshold for turn-on Supply current and power-on Undervoltage lockout hysteresis Input stage Input at high level – VIH Rising threshold Falling threshold PWMx = SGND PWM_x input pin current dVPWM/dt PWM_x input pin transient(1) Output stage Source resistance VCC = 10 V Inputs at high level IOUT = 100 mA Tj = 25 °C Sink resistance VCC = 10 V Inputs at low level IOUT = 100 mA Tj = 25 °C VCC = 10...

Open the catalog to page 9

Rad-hard 4.5 A dual low-side MOSFET driver - 10

Electrical characteristics RHFPM4424 Table 5. Electrical characteristics (continued) Test conditions Sink peak current VCC = 10 V Inputs at low level COUT to GND = 10 nF High level output voltage, VCC-VOUT Inputs at high level OUTH_1 ≡ OUTL_1 OUTH_2 ≡ OUTL_2 IOUT = 1 mA Low level output voltage, VOUT Inputs at low level OUTH_1 ≡ OUTL_1 OUTH_2 ≡ OUTL_2 IOUT = 1 mA Output rise time Output fall time Propagation delay Input- to-output delay time Matching between propagation delays(1) 1. Parameter guaranteed at design level, not tested in production.

Open the catalog to page 10

Rad-hard 4.5 A dual low-side MOSFET driver - 11

Total ionizing dose (MIL-STD-883 test method 1019) The products guaranteed in radiation within RHA QML-V system fully comply with the MILSTD-883 test method 1019 specification. The RHFPM4424 is being RHA QML-V qualified, tested and characterized in full compliance with the MIL-STD-883 specification, both below 10 mrad/s and between 50 and 300 rad/s. • • ELDRS characterization is performed in qualification only on both biased and unbiased parts, on a sample of ten units from two different wafer lots. Testing is performed in accordance with MIL-PRF-38535 and the test method 1019 of the...

Open the catalog to page 11