QDR™II SRAM - Samsung Semiconductor - (Version JPG) - PDF Catalogue | Technical Documentation

Samsung QDR™II SRAM

High-Bandwidth Memory for Advanced Network Equipment

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Samsung offers a broad portfolio of QDRII solutions, from 167 to 300 megahertz in densities from 18 to 72 megabits.

Memory Technology Processes Four Times More Data

Designers of next-generation telecommunications equipment require high-bandwidth memory for the fast data transmission today's networks demand. Samsung's Quad Data Rate™ II (QDRII) SRAM has two separate read and write data ports running independently at double data rate, resulting in the transmission of four data words per clock cycle. Samsung QDRII is optimal for high-speed network switches, routers and other telecommunications equipment. In addition to its speed advantages,

this memory solution offers a wide data-valid window of 65% of the clock cycle, simplifying system design.

Samsung QDRII operates at a clock frequency up to 300MHz at 1.8V, delivering high performance while reducing the power loading and heat generation common to dense circuit board designs. It is available in a 13mm by 15mm, 165-pin FBGA package. Samsung offers telecommunications customers a broad portfolio of QDRII memory solutions covering a wide range of configurations and densities.

Evolution of Quad Data Rate Memory

40Gbps


	QDRII 18/36Mb 250MHz	QDRII 18/36/72Mb 300MHz 5ns latency	QDRII+ 18/36/72Mb 400MHz 5ns latency
QDRI 18/36Mb 167MHz	5ns latency


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10Gbps

2.5Gbps

622Mbps 155Mbps

2000

2002

2004

2006

2008

2010

The speed and capacity of QDR SRAM have grown along with the transmission rates for SONET and other protocols, resulting in new generations of the memory technology. QDRII+ is an enhanced version of QDRII that supports higher speeds. Samsung 18Mb and 36Mb QDRII+ are available now.

QDR™II SRAM - Samsung Semiconductor - #1

Flash memory, ARM microprocessor, Sensor, Pseudo SRAM, Microcontroller