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S
SRAM
MEMORY AND STORAGE
S
DDR M SRAM
P
A T
C T
I/O
P
N
O
V V
CD
MH
V V
P
S
K7D321874A
2Mx18
1.8-2.5
2.0
400, 375, 333
1.5- 1.8
153BGA
BOL m Q4"06
K7D323674A
1Mx36
1.8-2.5
2.0
400, 375, 333
1.5- 1.8
153BGA
BOL in Q4"06
K7D321874C
2Mx18
1.8-2.5
2.0
400, 375, 333
1.5- 1.8
153BGA
Q3"06 (C/S)
K7D323674C
1Mx36
1.8-2.5
2.0
400, 375, 333
1.5- 1.8
153BGA
Q3"06 (C/S)
DDR II CIO/SIO M SRAM
P
AT CT
I/O
P
N
O
V V
CD MH
V V
P
S
C
K7I161882B
1Mx18
1.8
0.45,0.45,0.45,0.50 300,250,200,167
1.5,1.8
165FBGA
Mass Production
CIO-2B
K7I161884B
1Mx18
1.8
0.45,0.45,0.45,0.50 300,250,200,167
1.5,1.8
165FBGA
Mass Production
CIO-4B
K7J161882B
1Mx18
1.8
0.45,0.45,0.45,0.50 300,250,200,167
1.5,1.8
165FBGA
Mass Production
SO-2B
K7J163682B
512Kx36
1.8
0.45,0.45,0.45,0.50 300,250,200,167
1.5,1.8
165FBGA
Mass Production
SIO-2B
K7I163682B
512Kx36
1.8
0.45,0.45,0.45,0.50 300,250,200,167
1.5,1.8
165FBGA
Mass Production
CIO-2B
K7I163684B
512Kx36
1.8
0.45,0.45,0.45,0.50 300,250,200,167
1.5,1.8
165FBGA
Mass Production
CIO-4B
NOTES 2B B st
2
4B
B st 4 SIO
Se a ate I/O
CIO
C n I/O
DDR II CIO/SIO M SRAM
P
A T
C T
I/O
P
N
O
CD
MH
V V
P
S
C
K7I321882M
2Mx18
1.8
0.45,0.45,0.50
250,200,167
1.5,1.8
165FBGA
EOL in Q4"06
CIO-2B
K7I321884M
2Mx18
1.8
0.45,0.45,0.50
250,200,167
1.5,1.8
165FBGA
EOL in Q4"06
CIO-4B
K7J321882M
2Mx18
1.8
0.45,0.45,0.50
250,200,167
1.5,1.8
165FBGA
EOL in Q4"06
SIO-2B
K7I323682M
1Mx36
1.8
0.45,0.45,0.50
250,200,167
1.5,1.8
165FBGA
EOL in Q4"06
CIO-2B
K7I323684M
1Mx36
1.8
0.45,0.45,0.50
250,200,167
1.5,1.8
165FBGA
EOL in Q4"06
CIO-4B
K7J323682M
1Mx36
1.8
0.45,0.45,0.50
250,200,167
1.5,1.8
165FBGA
EOL in Q4"06
SIO-2B
K7I321882C
2Mx18
1.8
0.45
330,300,250
1.5,1.8
165FBGA
Q3"06 (C/S)
CIO-2B
K7I321884C
2Mx18
1.8
0.45
330,300,250
1.5,1.8
165FBGA
Q3"06 (C/S)
CIO-4B
K7J321882C
2Mx18
1.8
0.45
330,300,250
1.5,1.8
165FBGA
Q3"06 (C/S)
SIO-2B
K7I323682C
1Mx36
1.8
0.45
330,300,250
1.5,1.8
165FBGA
Q3"06 (C/S)
CIO-2B
K7I323684C
1Mx36
1.8
0.45
330,300,250
1.5,1.8
165FBGA
Q3"06 (C/S)
CIO-4B
K7J323682C
1Mx36
1.8
0.45
330,300,250
1.5,1.8
165FBGA
Q3"06 (C/S)
SIO-2B
NOTES 2B B st
2
4B
B st 4
SIO
Se a ate I/O
CIO
C n I/O
C-de s t
-s eed ns n
330, 300, 250MH ,
an e s -s eed
ns (200MH , 167MH ) sn sta e DLL
t.
SAMSUNG SEMICONDUCTOR, INC. 21a
SEPTEMBER 2006
BR-06-ALL-001
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