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A
SRAM
O
MEMORY AND STORAG
ASYNCHRONOUS SRAM ORDERING INFORMATION
. M
K
. G
.S
(tAA)
M: 1st Generation
A: 2nd Generation B: 3rd Generation
C: 4th Generation D: 5th Generation
E 6th Generation F: 7th Generation
G: 8th Generation H: 9th Generation
- CMOS C LPSRAM P L
LPSRAM TFT C LPSRAM
10:100ns 12:120ns 15:150ns
25: 25ns(only fCMOS Cell) 30:300ns
35: 35ns(except Poly Load cell) 45: 45ns(except fCMOS Cell)
55: 55ns
60: 60ns(only fCMOS Cell)
70:70ns
85:85ns
90: 90ns(only fCMOS Cell) DS Daisychain Sample
C
.A SRAM:
. S
C
E: Corner Vcc/Vss + Fast SPAM F:fCMOS Cell + LPSPAM H: High Speed(LPSPAM) X: High Voltage(LPSPAM) J: BICMOS
L: Poly Load Cell + LPSPAM P Center Vcc/Vss + Fast SPAM T:TFT Cell + LPSPAM
. D
A: TBGA(LF) C: CHIP BIZ
E: TBGA
G: SOP J:SOJ
L:TSOP1-0813.4F(LF) P:TSOP1-0820F(LF)
B: SOP(LF)
D: DIP F: FBGA H: BGA K: SOJ(LF)
06:64K 10: 1M
08: 256K 16: 16M
09: 512K 20: 2M
■ H S
LPSRAM
30: 3M
32: 32M
40: 4M
Q: TSOP2-400R(LF)
R: TSOP-R
20: 20ns
25: 25ns
60: 6M
64: 64M
80: 8M
T: TSOP
U: TSOP2-400(LF)
- H V
LPSRAM
W: WAFER
Z: UBGA
55: 55ns
70: 70ns
85: 85ns
. O
- C V /V
F SRAM
01 : x1
04: x4
08: x8
* Exception
10: 10ns
12: 12ns
13: 13ns
16: x16
18: x18
24: x24
- MFSRAM B-
15: 15ns
17: 17ns
20: 20ns
32: x32
32-SOJ-300 > S
25: 25ns
30: 30ns
35: 35ns
28-SOJ-300 > S
45 :45ns
.V
- K/ M/ M/ M LPSRAM
- BICM OS C
V /V F
SRAM
5: 1.5V
C: 5.0V
32-TSOP1-0813.4F > Y
06: 6ns
08: 8ns
09: 9ns
Q: VDD 3.0V/VDDQ 1.8V
32-TSOP1-0813.4 > Y
10: 10ns
12: 12ns
13: 13ns
R 1.65V~2.2V
32-TSOP1-0813.4R > N
15: 15ns
17: 17ns
20: 20ns
S: 2.5V
T2.7V~3.6V
U:3.0V
- M LPSRAM
25: 25ns
V: 3.3V
W:2.2V~3.3V
32-TSOP2-400F > V
30: 30ns(only Center Vcc/Vss + Fast SRAM)
35: 35ns(only Center Vcc/Vss + Fast SRAM) 7A: 7.2ns(only BICMOS) 8A: 8.6ns(only BICMOS) DS Daisychain Sample - A SRAM COMMON 00: NONE
(Containing Wafer, CHIP BIZ, Exception code)
32-TSOP2-400R > M
.M
C S
1: CS Low Active
2:CS1,CS2 - Dual Chip Select Sgnal 3: Sngle Chip Select with /LB,/UB(tOE) 4: Sngle Chip Select with /LB,/UB(tCS) 5: Dual Chip Select with /LB,/UB(tOE) 6: Dual Chip Select with /LB,/UB(tCS) 7:1/Os Control with /BYTE 8: CDMA Function 9: Multiplexed Address A: Mirror Chip Option
- COMMON T P
A: Automotive,Normal B: Commercial,Low Low C: Commercial,Normal D: Extended,Low Low E Extended,Normal F: Industrial,Low Low I: Industrial,Normal
L: Commercial,Low
M: Military,Normal
N: Extended,Low
P: Industrial,Low
Q: Automotive,Low
R Industrial,Super Low
T Extended,Super Low
U: Commercial,Ultra Super Low
0: NONENONE
- AFER CHIP BI L D
0: NONE,NONE
1 : Hot DC sort
2: Hot DC,selected AC sort
3: Cold/Hot Deselected AC sort
.P
T
- Common to all products, except of Mask ROM
- Divided into TAPE & REEL(In Mask ROM, divided into TRAY, AMMO Packing Separately)
T
P
T
N M
C
TAPE & REEl
T
Other (Tray, Tube, Jar)
0 (Number)
Stack
S
C
TRAY
Y
M
ROM AMMO PACKING
A
M
MODULE TAPE & REEl
P
MODULE Other Packing
M
16a
BR-06-ALL-001
SEPTEM BER 2006
SAMSUNG SEMICONDUCTOR, INC.
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