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	A SRAM	MEMORY AND STORAGE	S

U RAM H D_L P



	M		2MH6	100			48-TBGH	EL
		K1S321611C	2M*!6	j_ra_	35	100	4B-FBG*	Mass ftoduaon
		K1S3216ICO	2MH6	70	35	100	*ia-№A*
		K! 32161 BCD	2MH6	£ 70	35	100	48-FBG»
		<-S<71l ■	2Mx16	70	35	100	48-TBGA	*Mas* PioduOion
	M	K1S10161SM	1Mj16	70	20	70	48-TBGA.	EL
		K!SI5IKS'M		& 70	35		48^TS3A	eol

HIGH-SPEED M ASYNCHRONOUS FAST SRAM


	0 PN	0 V	V s	T	C A 80 85 es 55	C A	P 44SCU44TSOR2,48TEGA 32 501	s
	rame	4CID 1Mi4 !	10,12		C A 80 85 es 55	20.511.2)	P 44SCU44TSOR2,48TEGA 32 501	eol
	Kernt	4V1D 1Mi4 3 IBC1D 512K*8 5	3 8,10		80 65 65 55	20,5	32SOJ 36Sat44T5CF2	EOL
	K6BJ0	svio ä'SKia 3			80 65	20.5	36 »1 44 TS3=2
	Hl K6FC0	4V1D 128124 3		Gl	170.150.130	40,15	noresA	Kl
		3V1D 123x8 3	3 8.10.12	CI		20.5	32S0432TSOF2	tuL
	ZÖ	bcid 128*8 5	10,12.15	ai	mm*	20,5	32SCU32T!df2	Ea
	K6R10I	«CID 256i4 5	10.12,15	Cl	170,150.130	20.5	32EOJ	edl
		6V1D £4x16 3	3 8.10.12	Cl	170,150,130	20.5	44S0444TSOF2.46TBGA	eol
	k6rk	6C1D S4x16 5	10,12,15	Cl		20.5	44=ai44TsoF2.ieTBQA	eol

september 2006

SAM SUNG SEM I CONDUCTOR INC.

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