Serial F-RAM Memory FM24C512 - Ramtron - #1

/ 12


catalogue search
Serial F-RAM Memory FM24C512 - Ramtron
P. 01
Serial F-RAM Memory FM24C512 - Ramtron
P. 02
Serial F-RAM Memory FM24C512 - Ramtron
P. 03
Serial F-RAM Memory FM24C512 - Ramtron
P. 04
Serial F-RAM Memory FM24C512 - Ramtron
P. 05
Serial F-RAM Memory FM24C512 - Ramtron
P. 06
Serial F-RAM Memory FM24C512 - Ramtron
P. 07
Serial F-RAM Memory FM24C512 - Ramtron
P. 08
Serial F-RAM Memory FM24C512 - Ramtron
P. 09
Serial F-RAM Memory FM24C512 - Ramtron
P. 10
Serial F-RAM Memory FM24C512 - Ramtron
P. 11
Serial F-RAM Memory FM24C512 - Ramtron
P. 12
Pages:
Serial F-RAM Memory FM24C512 - Ramtron


See other catalogues for Ramtron

Text version of the page
Preliminar
FM24C512
512Kb I RAM Serial Memory
Features
512Kbit Ferroelectric Nonvolatile RAM
• Organized as 65,536 x 8 bits
• High Endurance 10 Billion (1010) Read/Writes
• 45 year Data Retention
• NoDelay™ Writes
• Advanced High-Reliability Ferroelectric Process
Fast Two-wire Serial Interface
• Up to 1 MHz Maximum Bus Frequency
• Supports Legacy Timing for 100 kHz & 400 kHz
Low Power Operation
• 5V Operation
• 250 nA Active Current (100 kHz)
• 120 \iA Standby Current
Industry Standard Configuration
• Industrial Temperature -40° C to +85° C
• 8-pin "Green'VRoHS EIAJ SOIC Package
Description
The FM24C512 is a 512-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 45 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.
The FM24C512 performs write operations at bus speed. No write delays are incurred. The next bus cycle may commence immediately without the need for data polling. In addition, the product offers write endurance orders of magnitude higher than EEPROM. Also, FRAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits.
These capabilities make the FM24C512 ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system.
TheFM24C512 is availableinan8-pin EIAJ SOIC package using an industry standard two-wire protocol. Ramtron's "green" packages are RoHS compliant. Specifications are guaranteed over an industrial temperature range of -40°C to +85°C.
Pin Configuration
NC A1 A2 VSS
VDD WP SCL SDA
Pin Names
Function
A1,A2
Device Select Address
SDA
Serial Data/Address
SCL
Serial Clock
WP
Write Protect
VSS
Ground
VDD
Supply Voltage 5V
Ordering Information
I "Green'VRoHS 8-pin EIAJ SOIC
FM24C512-G
This is a product that has fixed target specifications but are subject to change pending characterization results.
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921 (800) 545-FRAM, (719) 481-7000 http://www.ramtron.com
Rev. 1.0 Aug. 2006
Page 1of 12

pageCatalog pdf di En 2012-02-07-14