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Parallel F-RAM Memory FM22L16 - Ramtron


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Text version of the page
Preliminary
FM22L16
4Mbit I -RAM Memory
Features
4Mbit Ferroelectric Nonvolatile RAM
• Organized as 256Kx16
• Configurable as 512Kx8 Using /UB, /LB
• 1014 Read/Write Cycles
• NoDelay™ Writes
• Page Mode Operation to 40MHz
• Advanced High-Reliability Ferroelectric Process
SRAM Compatible
• JEDEC 256Kx16 SRAM Pinout
• 55 ns Access Time, 110 ns Cycle Time
Advanced Features
• Low VDD Monitor Protects Memory against Inadvertent Writes
• Software Programmable Block Write Protect
Superior to Battery-backed SRAM Modules
• No Battery Concerns
• Monolithic Reliability
• True Surface Mount Solution, No Rework Steps
• Superior for Moisture, Shock, and Vibration
Low Power Operation
• 2.7V - 3.6V Power Supply
• Low Current Mode (5uA) using ZZ pin
• 18 mA Active Current
Industry Standard Configuration
• Industrial Temperature -40° C to +85° C
• 44-pin "Green"/RoHS TSOP-II package
array is divided into 8 uniform blocks, each of which can be individually write protected.
The device is available in a 400 mil 44-pin TSOP-II surface mount package. Device specifications are guaranteed over industrial temperature range -40°C to +85°C.
Pin Configuration
Description
The FM22L16 is a 256Kx16 nonvolatile memory that reads and writes like a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory.
In-system operation of the FM22L16 is very similar to other RAM devices and can be used as a drop-in replacement for standard SRAM. Read and write cycles may be triggered by /CE or simply by changing the address. The F-RAM memory is nonvolatile due to its unique ferroelectric memory process. These features make the FM22L16 ideal for nonvolatile memory applications requiring frequent or rapid writes in the form of an SRAM.
The FM22L16 includes a low voltage monitor that blocks access to the memory array when VDD drops below a critical threshold. The memory is protected against an inadvertent access and data corruption under this condition. The device also features software-controlled write protection. The memory
r
W >
a4 ŒZ
1
44
ZZD a5
a3 ŒZ
CM
43
ZZD a6
a2 ŒZ
3
42
ZZD a7
a1 ŒZ
4
41
ZZD oe
a0 ŒZ
5
40
ZZD ub
ce ŒZ
6
39
ZZD lb
dq0 ŒZ
7
38
n dq15
dq1 ŒZ
CO
37
fi dq14
dq2 ŒZ
9
36
fi dq13
dq3 ŒZ
10
35
ZZD dq12
vdd ŒZ
11
34
n vss
vss ŒZ
12
33
n vdd
dq4 ŒZ
13
32
fi dq11
dq5 ŒZ
14
31
ZZD dq10
dq6 ŒZ
15
30
ZZD dq9
dq7 ŒZ
16
29
ZZD dq8
we ŒZ
17
28
ZZD /zz
a17 ŒZ
18
27
ZZD a8
a16 ŒZ
19
26
ZZD a9
a15 ŒZ
20
25
ZZD a10
a14 ŒZ
21
24
ZZD a11
a13 ŒZ
22
23
J
ZZD a12
Ordering Information
FM22L16-55-TG
55 ns access, 44-pin
"Green"/RoHS TSOP-II
This is a product that has fixed target specifications but are subject Ramtron International Corporation
to change pending characterization results. 1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
Rev. 1.2 http ://www.ramtron. com
Dec. 2007 Page 1 of 14

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