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| | | FM22L16 4Mbit I -RAM Memory | | |
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| | | Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay™ Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process SRAM Compatible • JEDEC 256Kx16 SRAM Pinout • 55 ns Access Time, 110 ns Cycle Time Advanced Features • Low VDD Monitor Protects Memory against Inadvertent Writes • Software Programmable Block Write Protect | | |
| | | Superior to Battery-backed SRAM Modules • No Battery Concerns • Monolithic Reliability • True Surface Mount Solution, No Rework Steps • Superior for Moisture, Shock, and Vibration Low Power Operation • 2.7V - 3.6V Power Supply • Low Current Mode (5uA) using ZZ pin • 18 mA Active Current Industry Standard Configuration • Industrial Temperature -40° C to +85° C • 44-pin "Green"/RoHS TSOP-II package | | |
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| | | array is divided into 8 uniform blocks, each of which can be individually write protected. The device is available in a 400 mil 44-pin TSOP-II surface mount package. Device specifications are guaranteed over industrial temperature range -40°C to +85°C. Pin Configuration | | |
| | | Description The FM22L16 is a 256Kx16 nonvolatile memory that reads and writes like a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory. In-system operation of the FM22L16 is very similar to other RAM devices and can be used as a drop-in replacement for standard SRAM. Read and write cycles may be triggered by /CE or simply by changing the address. The F-RAM memory is nonvolatile due to its unique ferroelectric memory process. These features make the FM22L16 ideal for nonvolatile memory applications requiring frequent or rapid writes in the form of an SRAM. The FM22L16 includes a low voltage monitor that blocks access to the memory array when V DD drops below a critical threshold. The memory is protected against an inadvertent access and data corruption under this condition. The device also features software-controlled write protection. The memory | | |
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| | | | | | | | | | | | | r | W > | | | | | a4 ŒZ | 1 | 44 | ZZD a5 | | | | a3 ŒZ | CM | 43 | ZZD a6 | | | | a2 ŒZ | 3 | 42 | ZZD a7 | | | | a1 ŒZ | 4 | 41 | ZZD oe | | | | a0 ŒZ | 5 | 40 | ZZD ub | | | | ce ŒZ | 6 | 39 | ZZD lb | | | | dq0 ŒZ | 7 | 38 | n dq15 | | | | dq1 ŒZ | CO | 37 | fi dq14 | | | | dq2 ŒZ | 9 | 36 | fi dq13 | | | | dq3 ŒZ | 10 | 35 | ZZD dq12 | | | | vdd ŒZ | 11 | 34 | n vss | | | | vss ŒZ | 12 | 33 | n vdd | | | | dq4 ŒZ | 13 | 32 | fi dq11 | | | | dq5 ŒZ | 14 | 31 | ZZD dq10 | | | | dq6 ŒZ | 15 | 30 | ZZD dq9 | | | | dq7 ŒZ | 16 | 29 | ZZD dq8 | | | | we ŒZ | 17 | 28 | ZZD /zz | | | | a17 ŒZ | 18 | 27 | ZZD a8 | | | | a16 ŒZ | 19 | 26 | ZZD a9 | | | | a15 ŒZ | 20 | 25 | ZZD a10 | | | | a14 ŒZ | 21 | 24 | ZZD a11 | | | | a13 ŒZ | 22 | 23 J | ZZD a12 | | | | | | | | | | | Ordering Information | | | | FM22L16-55-TG | 55 ns access, 44-pin | | | | | | "Green"/RoHS TSOP-II | | | | | | | | | | | |
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| | | This is a product that has fixed target specifications but are subject Ramtron International Corporation to change pending characterization results. 1850 Ramtron Drive, Colorado Springs, CO 80921 (800) 545-FRAM, (719) 481-7000 Rev. 1.2 http ://www.ramtron. com Dec. 2007 Page 1 of 14 | | |
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