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Preliminary

Parallel F-RAM Memory FM21L16 - 33928 FM21L16

2Mbit F-RAM Memory Features

2Mbit Ferroelectric Nonvolatile RAM Superior to Battery-backed SRAM Modules • Organized as 128Kx16 • No Battery Concerns • Configurable as 256Kx8 Using /UB, /LB • Monolithic Reliability • 10
14 Read/Write Cycles • True Surface Mount Solution, No Rework Steps • NoDelay™ Writes • Superior for Moisture, Shock, and Vibration • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process Low Power Operation • 2.7V – 3.6V Power Supply SRAM Compatible • Low Current Mode (5µA) using ZZ pin • Industry Std. 128Kx16 SRAM Pinout • 18 mA Active Current • 60 ns Access Time, 110 ns Cycle Time Industry Standard Configuration Advanced Features • Industrial Temperature -40 ° C to +85 ° C • Low V
DD Monitor Protects Memory against Inadvertent Writes • 44-pin “Green”/RoHS TSOP-II package • Software Programmable Block Write Protect

Description

The FM21L16 is a 128Kx16 nonvolatile memory that reads and writes like a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory. In-system operation of the FM21L16 is very similar to other RAM devices and can be used as a drop-in replacement for standard SRAM. Read and write cycles may be triggered by /CE or simply by changing the address. The F-RAM memory is nonvolatile due to its unique ferroelectric memory process. These features make the FM21L16 ideal for nonvolatile memory applications requiring frequent or rapid writes in the form of an SRAM. The FM21L16 includes a low voltage monitor that blocks access to the memory array when V Pin Configuration
DD drops below a critical threshold. The memory is protected against an inadvertent access and data corruption under this condition. The device also features software-controlled write protection. The memory array is divided into 8 uniform blocks, each of which can be individually write protected. The device is available in a 400 mil 44-pin TSOP-II surface mount package. Device specifications are guaranteed over industrial temperature range –40°C to +85°C. Ordering Information FM21L16-60-TG 60 ns access, 44-pin “Green”/RoHS TSOP-II
This is a product that has fixed target specifications but are subject Ramtron International Corporation to change pending characterization results. 1850 Ramtron Drive, Colorado Springs, CO 80921 (800) 545-FRAM, (719) 481-7000 Rev. 1.1 http://www.ramtron.com Dec. 2007 Page 1 of 14