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Memory, DSP, Processor, Analog converter, Non-volatile memory
Text version of the page
FM21L16 - 128Kx16 FRAM Read CycleAC Parameters (T
A = -40 ° C to + 85 ° C, V
DD = 2.7V to 3.6V unless otherwise specified) Symbol Parameter Min Max Units Notes t
RC Read Cycle Time 110 - ns t
CE Chip Enable Access Time - 60 ns t
AA Address Access Time - 110 ns t
OH Output Hold Time 20 - ns t
AAP Page Mode Address Access Time - 25 ns t
OHP Page Mode Output Hold Time 5 - ns t
CA Chip Enable Active Time 60 - ns t
PC Precharge Time 50 - ns t
BA /UB, /LB Access Time - 20 ns t
AS Address Setup Time (to /CE low) 0 - ns t
AH Address Hold Time (/CE-controlled) 60 - ns t
OE Output Enable Access Time - 15 ns t
HZ Chip Enable to Output High-Z - 10 ns 1 t
OHZ Output Enable High to Output High-Z - 10 ns 1 t
BHZ /UB, /LB High to Output High-Z - 10 ns 1 Write CycleAC Parameters (T
A = -40 ° C to + 85 ° C, V
DD = 2.7V to 3.6V unless otherwise specified) Symbol Parameter Min Max Units Notes t
WC Write Cycle Time 110 - ns t
CA Chip Enable Active Time 60 - ns t
CW Chip Enable to Write Enable High 60 - ns t
PC Precharge Time 50 - ns t
BHZ /UB, /LB High to Output High-Z 5 ns t
PWC Page Mode Write Enable Cycle Time 25 - ns t
WP Write Enable Pulse Width 16 - ns t
AS Address Setup Time (to /CE low) 0 - ns t
ASP Page Mode Address Setup Time
(to /WE low) 8 - ns t
AHP Page Mode Address Hold Time
(to /WE low) 15 - ns t
WLC Write Enable Low to /CE High 25 - ns t
WLA Write Enable Low to A(16:2) Change 25 - ns t
AWH A(16:2) Change to Write Enable High 110 - ns t
DS Data Input Setup Time 14 - ns t
DH Data Input Hold Time 0 - ns t
WZ Write Enable Low to Output High Z - 10 ns 1 t
WX Write Enable High to Output Driven 10 - ns 1 t
WS Write Enable to /CE Low Setup Time 0 - ns 2 t
WH Write Enable to /CE High Hold Time 0 - ns 2
Notes 1.This parameter is characterized but not 100% tested. 2.The relationship between /CE and /WE determines if a /CE- or /WE-controlled write occurs. The parameters t WS and t WH are not tested. Capacitance
(T A = 25 ° C , f=1 MHz, V DD = 3.3V) Symbol Parameter Min Max Units Notes C
I/O Input/Output Capacitance (DQ) - 8 pF C
IN Input Capacitance - 6 pF C
ZZ Input Capacitance of /ZZ pin - 8 pF
Rev. 1.1 Dec. 2007 Page 9 of 14
A = -40 ° C to + 85 ° C, V
DD = 2.7V to 3.6V unless otherwise specified) Symbol Parameter Min Max Units Notes t
RC Read Cycle Time 110 - ns t
CE Chip Enable Access Time - 60 ns t
AA Address Access Time - 110 ns t
OH Output Hold Time 20 - ns t
AAP Page Mode Address Access Time - 25 ns t
OHP Page Mode Output Hold Time 5 - ns t
CA Chip Enable Active Time 60 - ns t
PC Precharge Time 50 - ns t
BA /UB, /LB Access Time - 20 ns t
AS Address Setup Time (to /CE low) 0 - ns t
AH Address Hold Time (/CE-controlled) 60 - ns t
OE Output Enable Access Time - 15 ns t
HZ Chip Enable to Output High-Z - 10 ns 1 t
OHZ Output Enable High to Output High-Z - 10 ns 1 t
BHZ /UB, /LB High to Output High-Z - 10 ns 1 Write CycleAC Parameters (T
A = -40 ° C to + 85 ° C, V
DD = 2.7V to 3.6V unless otherwise specified) Symbol Parameter Min Max Units Notes t
WC Write Cycle Time 110 - ns t
CA Chip Enable Active Time 60 - ns t
CW Chip Enable to Write Enable High 60 - ns t
PC Precharge Time 50 - ns t
BHZ /UB, /LB High to Output High-Z 5 ns t
PWC Page Mode Write Enable Cycle Time 25 - ns t
WP Write Enable Pulse Width 16 - ns t
AS Address Setup Time (to /CE low) 0 - ns t
ASP Page Mode Address Setup Time
(to /WE low) 8 - ns t
AHP Page Mode Address Hold Time
(to /WE low) 15 - ns t
WLC Write Enable Low to /CE High 25 - ns t
WLA Write Enable Low to A(16:2) Change 25 - ns t
AWH A(16:2) Change to Write Enable High 110 - ns t
DS Data Input Setup Time 14 - ns t
DH Data Input Hold Time 0 - ns t
WZ Write Enable Low to Output High Z - 10 ns 1 t
WX Write Enable High to Output Driven 10 - ns 1 t
WS Write Enable to /CE Low Setup Time 0 - ns 2 t
WH Write Enable to /CE High Hold Time 0 - ns 2
Notes 1.This parameter is characterized but not 100% tested. 2.The relationship between /CE and /WE determines if a /CE- or /WE-controlled write occurs. The parameters t WS and t WH are not tested. Capacitance
(T A = 25 ° C , f=1 MHz, V DD = 3.3V) Symbol Parameter Min Max Units Notes C
I/O Input/Output Capacitance (DQ) - 8 pF C
IN Input Capacitance - 6 pF C
ZZ Input Capacitance of /ZZ pin - 8 pF
Rev. 1.1 Dec. 2007 Page 9 of 14