Parallel F-RAM Memory FM20L08 - Ramtron - #1

/ 12


catalogue search
Parallel F-RAM Memory FM20L08 - Ramtron
P. 01
Parallel F-RAM Memory FM20L08 - Ramtron
P. 02
Parallel F-RAM Memory FM20L08 - Ramtron
P. 03
Parallel F-RAM Memory FM20L08 - Ramtron
P. 04
Parallel F-RAM Memory FM20L08 - Ramtron
P. 05
Parallel F-RAM Memory FM20L08 - Ramtron
P. 06
Parallel F-RAM Memory FM20L08 - Ramtron
P. 07
Parallel F-RAM Memory FM20L08 - Ramtron
P. 08
Parallel F-RAM Memory FM20L08 - Ramtron
P. 09
Parallel F-RAM Memory FM20L08 - Ramtron
P. 10
Parallel F-RAM Memory FM20L08 - Ramtron
P. 11
Parallel F-RAM Memory FM20L08 - Ramtron
P. 12
Pages:
Parallel F-RAM Memory FM20L08 - Ramtron


See other catalogues for Ramtron
You may also be interested in

Processor, Converter, Digital converter, FRAM, Analog converter


Text version of the page
Preliminary
FM20L08
1Mbit Bytewide I RAM Memory - Extended Temp.
Features
1Mbit Ferroelectric Nonvolatile RAM
• Organized as 128Kx8
• Unlimited Read/Write Cycles
• NoDelay™ Writes
• Page Mode Operation to 33MHz
• Advanced High-Reliability Ferroelectric Process
SRAM Replacement
• JEDEC 128Kx8 SRAM pinout
• 60 ns Access Time, 150 ns Cycle Time
System Supervisor
• Low Voltage monitor drives external /LVL signal
• Write Protects memory for low voltage condition
Superior to Battery-backed SRAM Modules
• No battery concerns
• Monolithic reliability
• True surface mount solution, no rework steps
• Superior for moisture, shock, and vibration
• Resistant to negative voltage undershoots
Low Power Operation
• 3.3V +10%, -5% Power Supply
• 25 mA Active Current
Industry Standard Configurations
• Extended Temperature -20° C to +85° C
• 32-pin "Green'VRoHS TSOP (-TGC)
Description
The FM20L08 is a 128K x 8 nonvolatile memory that reads and writes like a standard SRAM. A ferroelectric random access memory or FRAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and unlimited write endurance make FRAM superior to other types of memory.
In-system operation of the FM20L08 is very similar to other RAM devices and can be used as a drop-in replacement for standard SRAM. Read and write cycles may be triggered by /CE or simply by changing the address. The FRAM memory is nonvolatile due to its unique ferroelectric memory process. These features make the FM20L08 ideal for nonvolatile memory applications requiring frequent or rapid writes in the form of an SRAM.
The FM20L08 includes a voltage monitor function that monitors the power supply voltage. It asserts an active-low signal that indicates the memory is write-protected when VDD drops below a critical threshold. When the /LVL signal is low, the memory is protected against an inadvertent access and data corruption.
Device specifications are guaranteed over the temperature range -20°C to +85°C.
Pin Configuration
s-
-V
A11 UZ
1
32
ZD OE
A9 \JZ
2
31
ZU A10
A8 UZ
3
30
ZU CE
A13 Œ1
4
29
ZU DQ7
WE UZ
5
28
ZD DQ6
DNU UZ
6
27
DQ5
A15 UZ
7
TSOP-I
26
DQ4
VDD UZ
8
25
DQ3
LVL UZ
9
24
=□ VSS
A16 UZ
10
23
DQ2
A14 UZ
11
22
DQ1
A12 UZ
12
21
DQ0
A7 UZ
13
20
A0
A6
14
19
A1
A5
15
18
A2
A4
16
17
A3
Ordering Information
FM20L08-60-TGC
60 ns access, 32-pin "Green'VRoHS TSOP
This is a product that has fixed target specifications but are subject to change pending characterization results.
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921 (800) 545-FRAM, (719) 481-7000
Rev. 1.9 May 2008
Page 1 of 12

pageCatalog pdf di En 2012-02-07-15