Parallel F-RAM Memory FM18L08 - Ramtron - #1

/ 13


catalogue search
Parallel F-RAM Memory FM18L08 - Ramtron
P. 01
Parallel F-RAM Memory FM18L08 - Ramtron
P. 02
Parallel F-RAM Memory FM18L08 - Ramtron
P. 03
Parallel F-RAM Memory FM18L08 - Ramtron
P. 04
Parallel F-RAM Memory FM18L08 - Ramtron
P. 05
Parallel F-RAM Memory FM18L08 - Ramtron
P. 06
Parallel F-RAM Memory FM18L08 - Ramtron
P. 07
Parallel F-RAM Memory FM18L08 - Ramtron
P. 08
Parallel F-RAM Memory FM18L08 - Ramtron
P. 09
Parallel F-RAM Memory FM18L08 - Ramtron
P. 10
Parallel F-RAM Memory FM18L08 - Ramtron
P. 11
Parallel F-RAM Memory FM18L08 - Ramtron
P. 12
Parallel F-RAM Memory FM18L08 - Ramtron
P. 13
Pages:
Parallel F-RAM Memory FM18L08 - Ramtron


See other catalogues for Ramtron

Text version of the page
FM18L08
256Kb Bytewide I RAM Memory
Features
256K bit Ferroelectric Nonvolatile RAM
• Organized as 32,768 x 8 bits
• 45 year Data Retention
• Unlimited Read/Write Cycles
• NoDelay™ Writes
• Advanced High-Reliability Ferroelectric Process
Superior to Battery-Backed SRAM
• No Battery Concerns
• Monolithic Reliability
• True Surface Mount Solution, No Rework Steps
• Superior for Moisture, Shock, and Vibration
• Resistant to Negative Voltage Undershoots
SRAM & EEPROM Compatible
• JEDEC 32Kx8 SRAM & EEPROM pinout
• 70 ns Access Time
• 140 ns Cycle Time
Low Power Operation
• 3.0V to 3.65V Operation
• 15 mA Active Current
• 15 |jA Standby Current
Industry Standard Configuration
• Industrial Temperature -40° C to +85° C
• 32-pin "Green" TSOP Package
• 28-pin SOIC or DIP Package
• "Green" Packaging Options
Description
The FM18L08 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and reads and writes like a RAM. It provides data retention for 45 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make FRAM superior to other types of nonvolatile memory.
In-system operation of the FM18L08 is very similar to other RAM based devices. Read cycle and write cycle times are equal. The FRAM memory, however, is nonvolatile due to its unique ferroelectric memory process. Unlike BBSRAM, the FM18L08 is a truly monolithic nonvolatile memory. It provides the same functional benefits of a fast write without the disadvantages associated with modules and batteries or hybrid memory solutions.
These capabilities make the FM18L08 ideal for nonvolatile memory applications requiring frequent or rapid writes in a bytewide environment. The availability of a surface-mount package improves the manufacturability of new designs, while the DIP package facilitates simple design retrofits. Device specifications are guaranteed over a temperature range of -40°C to +85°C.
Pin Configurations
1-
NC etz OE ce
1
2
o
32 31
A11 ec
3
30
A9 ec
4
29
A8 ec
5
28
A13 cc
6
27
"WE ec
7
26
VDD ec
8
TSOP-I
25
A14 ec
9
24
A12 nz
10
23
A7 ec
11
22
A6 ec
12
21
A5 ec
13
20
A4
14
19
A3
15
18
NC
16
17
NC
eA10 CE
zd zd zd zd zd
DQ7 DQ6 DQ5 DQ4 DQ3
h-n VSS
DQ2
DQ1
DQ0
A0
A1
A2
NC
A14
nz
c
1
w
28
ZD VDD
A12
nz
2
27
ZD we
A7
nz
3
26
ZD A13
A6
nz
4
25
ZD A8
A5
nz
5
24
ZD A9
A4
A3
nz nz
6
soic and dip
23 22
ZD A11 ZD OE
A2 A1
nz nz
8
21 20
ZD A10 ZD CE
AO
nz
10
19
ZD DQ7
DQ0
nz
11
18
ZD DQ6
DQ1
nz
12
17
ZD DQ5
DQ2
nz
13
16
ZD DQ4
VSS
nz
14
15
ZD DQ3
Ordering Information
FM18L08-70-TG
70 ns access, 32-pin "Green" TSOP
FM18L08-70-S
70 ns access, 28-pin SOIC
FM18L08-70-P
70 ns access, 28-pin DIP
FM18L08-70-SG
70 ns access, 28-pin "Green" SOIC
FM18L08-70-PG
70 ns access, 28-pin "Green" DIP
This product conforms to specifications per the terms of the Ramtron standard warranty. The product has completed Ramtron's internal qualification testing and has reached production status.
Rev. 3.4 July 2007
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921 (800) 545-FRAM, (719) 481-7000 http://www.ramtron.com
1 of 13

pageCatalog pdf di En 2012-02-07-14