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PHI ADEPT-1010 D-SIMS - Physical Electronics Inc.


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PHI ADEPT-1010 D-SIMS - 61454 PHI

Automated Depth Profiling Tool

ADEPT -1010

The ADEPT-1010™ employs a unique secondary ion extraction system which provides improved transmission on a quadrupole dynamic SIMS instrument. High transmission yields low detection limits for implant depth profiling making the determination of implant junction depth and dose a routine task for the ADEPT . These critical factors in implantation can be measured with a reproducibility of a few percent, consistent with the needs of the semiconductor industry. The ultra-high vacuum environment of the ADEPT-1010 facilitates depth profiling for low levels of atmospheric contaminants while maintaining excellent depth resolution and low sputter rates. This capability is important to the integrity of high speed semiconductor devices. For high throughput applications the ADEPT-1010 can be measured with a reproducibility of a few percent, consistent with the needs of the semiconductor industry. The ultra-high vacuum environment of the ADEPT-1010 facilitates depth profiling for low levels of atmospheric contaminants while maintaining excellent depth resolution and low sputter rates. This capability is important to the integrity of high speed semiconductor devices. For high throughput applications the ADEPT-1010 can be setup to automatically profile multiple samples without operator intervention using SIMetric™ instrument software.
© 2007 Physical Electronics, Inc.

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