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Product SpecificationBroadband Switches 75-Ω PE4231 - 34407 PE4231Product DescriptionSPDT High Power UltraCMOS™ DC – 1.3 GHz RF Switch The PE4231 SPDT High Power UltraCMOS™ RF Switch is designed to cover a broad range of applications from DC to 1.3 GHz. This single-supply reflective switch integrates on-board CMOS control logic driven by a simple, single-pin CMOS or TTL compatible control input. Using a nominal +3-volt power supply, a typical input 1 dB compression point of +32 dBm can be achieved. The PE4231 also exhibits input-output isolation of better than 42 dB at 1.0 GHz and is offered in a small 8-lead MSOP package. The PE4231 SPDT High Power Features? Optimized for 75 systems ? Single +3-volt power supply ? Low insertion loss: 0.80 dB at 1.0 GHz ? High isolation: 42 dB at 1.0 GHz ? Typical input 1 dB compression point of +32 dBm ® ) CMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS. UltraCMOS™ RF Switch is manufactured in Peregrine’s patented Ultra Thin Silicon (UTSi ? Single-pin CMOS or TTL logic control ? Low cost Figure 1. Functional Diagram Figure 2. Package Type Table 1. Electrical Specifications @ +25 °C, V RFCommonRF1RF2 8-lead MSOP CMOSControlDriver CTRL DD = 3 V (Z S = Z L = 75 ) Parameter Conditions Minimum Typical Maximum Units Operation Frequency 1 DC 1300 MHz Insertion Loss 50 MHz 1000 MHz 0.50 0.80 0.60 0.90 dB Isolation – RFCommon to RF1/RF2 50 MHz 1000 MHz 73407542 dB Isolation – RF1 to RF2 50 MHz 1000 MHz 58336035 dB Return Loss 1000 MHz 16 17 dB ‘ON’ Switching Time CTRL to 0.1 dB final value, 2 GHz 2000 ns ‘OFF’ Switching Time CTRL to 25 dB isolation, 2 GHz 900 ns Video Feedthrough 2 15 mV pp Input 1 dB Compression 3 1000 MHz 30 32 dBm Input IP3 3 1000 MHz, 17 dBm 50 dBm Notes: 1. Device linearity will begin to degrade below 1 MHz. 2. Measured with a 1 ns risetime, 0/3 V pulse and 500 MHz bandwidth. 3. Measured in a 50 system. Document No. 70-0097-01 www.psemi.com ©2005 Peregrine Semiconductor Corp. All rights reserved. Page 1 of 7 |
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