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| OPTEK | |||||||||||||||||||||||||||||||||||||||
| Product Bulletin OP913SL June 1996 | |||||||||||||||||||||||||||||||||||||||
| PIN Silicon Photodiodes Types OP913SL, OP913WSL | |||||||||||||||||||||||||||||||||||||||
| .180 (4.57) | |||||||||||||||||||||||||||||||||||||||
| .019 (0.48) | |||||||||||||||||||||||||||||||||||||||
| -.040 (1.02) MAX | |||||||||||||||||||||||||||||||||||||||
| GLASS FLUSH S ±0.010 (0.25) MAX | |||||||||||||||||||||||||||||||||||||||
| .500 (12.70) MIN | |||||||||||||||||||||||||||||||||||||||
| ■ 045 (1 . 14) | |||||||||||||||||||||||||||||||||||||||
| .019 (0.48) | |||||||||||||||||||||||||||||||||||||||
| .240 (6.10) | |||||||||||||||||||||||||||||||||||||||
| _ .200 0 ,-, NOM * 5.08 | |||||||||||||||||||||||||||||||||||||||
| 9.40) B.51) | |||||||||||||||||||||||||||||||||||||||
| ■335 (8.51) .305 (7.75) J_ | |||||||||||||||||||||||||||||||||||||||
| .500 (12.70) MIN | |||||||||||||||||||||||||||||||||||||||
| DIMENSIONS ARE IN INCHES (MILLIMETERS) | |||||||||||||||||||||||||||||||||||||||
| Absolute Maximum Ratings (Ta = 25° C unless otherwise noted) Reverse Voltage................................................... 32 V Storage Temperature Range.............................. -65° C to +150° C Operating Temperature Range............................ -65° C to +125° C Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering iron]......................................................... 260°C(1) Power Dissipation............................................. 150 mW^ Notes: (1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. (2) Derate linearly 1.5 mW/° C above 25° C. (3) Junction temperature maintained at 25° C. (4) Light source is an unfiltered tungsten bulb operating at CT = 2870 K or equivalent infrared source. (5) At any particular wavelength the flux responsivity, R0, is the ratio of the diode photocurrent to the radiant flux producing it. R0 is related to quantum efficiency by: Re==7M mo") Where r|q is the quantum efficiency in electrons per photon and X is the wavelength in nanometers. Thus at 900 nm, 0.60 A/W corresponds to a quantum efficiency of 83%. (6) NEP is the radiant flux at a specified wavelength, required for unity signal-to-noise ratio normalized for bandwidth. NEP= wva/ where In/Va/" is the bandwidth Re normalized shot noise. NEP calculation is made using responsivity at peak sensitivity wavelength, with spot noise measurement at 1000 Hz in a noise bandwidth of 6 Hz. (X, f,A f) = (kp,1000 Hz, 6 Hz). | |||||||||||||||||||||||||||||||||||||||
| Features • Wide or Narrow receiving angle available • Large active area (.115" x .115") • Fast switching time • Linear response vs irradiance • Enhanced temperature range Description The OP913SL and OP913WSL each consist of a PIN silicon photodiode mounted in a two-leaded, TO-5 hermetically sealed package. The lensing effect of the OP913SL allows an acceptance angle of 10° measured from the optical axis to the half power point. The flat lens of the OP913WSL has an acceptance half angle of 30°. The large active area allows very low light level detection. Replaces OP913andOP913W | |||||||||||||||||||||||||||||||||||||||
| Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-2396 3-56 | |||||||||||||||||||||||||||||||||||||||