Company catalog Jun-07 - Modulight Inc. - (Version JPG) - Page n° 49 - PDF Catalogue | Technical Documentation

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Diode laser, Diode, DFB laser, DFB laser diode, Laser

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applications

ML1005

1490 nm DFB Laser Diode Chip for 1.25 Gb/s and 2.5 Gb/s

Overview

Modulight's ML1005 is a high-performance Distributed Feedback (DFB) laser diode chip. The laser emits at 1490 nm wavelength. Laser diode emission wavelength is controlled by an internal grating. ML1005 has been designed for digital

optical communication networks with up to 3.125 Gb/s modulation speeds. The bare die product is available as two different versions, with 6 mW and 10 mW maximum rated power.

Electro-Optical Characteristics¹


Parameter	Symbol	Min	Typ	Max	Unit	Test Condition
Rated optical power²	PR	6/10	-	-	mW	0-70°C
Threshold current³	Ith	-	18	28	mA	25°C
		_-	35	50		70°C
Operating current	lop	-	38	46	mA	25°C, Pop=5 mW
		-	65	90		70°C, Pop=5 mW
Operating voltage	Vop	-	1.1	1.5	V	0-70°C, Pop=5 mW
Serial resistance⁴	Rs	-	5	-	Q	25°C, Pop=5 mW
Slope efficiency⁴	ⁿ	0.18	0.26	-	W/A	25°C, Pop=5 mW
		0.10	0.16			70°C, Pop=5 mW
Central wavelength	xc	1487	1490	1493	nm	25°C, Pop=5 mW
		1482	-	1498		0-70°C, Pop=5 mW
Spectral width⁵	AX	-	0.11	0.2	nm	25°C, Pop=5 mW
			0.07	0.2		70°C, Pop=5 mW
Side Mode Suppression Ratio⁶	SMSR	30	40	-	dB	0-70°C, Pop=5 mW
Temperature shift	dX/dT	_-	0.11		nm/K	0-70°C, Pop=5 mW
of wavelength
Perpendicular beam	91	_-	45	48	deg	25°C, Pop=5 mW
divergence angle (FWHM)⁷
Parallel beam divergence	e\|\|	-	26	34	deg	25°C, Pop=5 mW
angle (FWHM)⁷
Modulation bandwidth	f-3dB	6	-	-	GHz	25°C, Iop=Ith+16 mA
		4	-	-		70°C, Iop=Ith+16 mA

Note 1: All temperatures refer to case temperature, Tc

Note 2: Kink-free, demonstrated reliability. Two different product versions available.

Note 3: 2nd derivative method

Note 4: PLO=1 mW, P HI=7 mW

Note 5: RMS, -20 dB

Note 6: -20 dB

Note 7: Full Width at Half Maximum

Company catalog Jun-07 - Modulight Inc. - #49

Diode laser, Diode, DFB laser, DFB laser diode, Laser