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4200A-SCS Parameter Analyzer
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Catalog excerpts

4200A-SCS Parameter Analyzer - 1

4200A-SCS Parameter AnalyzerDatasheet See your innovations come to life. The 4200A-SCS is a customizable and fully-integrated parameter analyzer that provides synchronized insight into current-voltage (I-V), capacitance-voltage (C-V), and ultra-fast pulsed I-V characterization. The highest performance parameter analyzer, the 4200A-SCS accelerates semiconductor, materials, and process development. The 4200A-SCS Clarius™ GUI-based Software provides clear, uncompromised measurement and analysis capability. Furnished with embedded measurement expertise and hundreds of ready-to-use application tests, Clarius Software enables you to dig deeper into your research with speed and confidence. The 4200A-SCS Parameter Analyzer is completely customizable and fully upgradable, so you can add the instruments you need now - or later. With the 4200A-SCS Parameter Analyzer, making connections to your bold discoveries has never been easier. Key Performance Specifications I-V Source Measure Unit (SMU) • ±210 V/100 mA or ±210 V/1 A modules • 100 fA measure resolution • 10 aA measure resolution with optional preamp • 10 mHz - 10 Hz very low frequency capacitance measurements • 4-quadrant operation • 2 or 4-wire connections C-V Multi-frequency Capacitance Unit (CVU) • AC impedance measurements (C-V, C-f, C-t) • 1 kHz - 10 MHz frequency range • ±30 V (60 V differential) built-in DC bias, expandable to ±210 V (420 V differential) • Simple switching between I-V and C-V measurements with the optional CVIV Multi-Switch Pulsed I-V Ultra-fast Pulse Measure Unit (PMU) • Two independent or synchronized channels of high-speed pulsed I-V source and measure • 200 MSa/sec, 5 ns sampling rate • ±40 V (80 Vp-p), ±800 mA • Transient waveform capture mode • Arbitrary waveform generator for multi-level pulse waveform with 10 ns programmable resolution High Voltage Pulse Generator Unit (PGU) • Two channels of high-speed pulsed V source • ±40 V (80 Vp-p), ±800 mA • Arbitrary waveform generator Segment ARB® mode for multi-level pulse waveform with 10 ns programmable resolution I-V/C-V Multi-Switch Module (CVIV) • Easily switch between I-V and C-V measurements without re-cabling or lifting prober needles • Move the C-V measurement to any terminal without re-cabling or lifting prober needles • ±210 V DC bias capable Remote Preamplifier/Switch Module (RPM) • Automatically switches between I-V, C-V, and ultra-fast pulsed I-V measurements • Extends current sensitivity of the 4225-PMU to tens of picoamps • Reduces cable capacitance effects

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4200A-SCS Parameter Analyzer - 2

The Ultimate Parameter Analyzer for Materials, Semiconductor Devices and Process Development Perform I-V, C-V and pulsed I-V characterization with speed, clarity and confidence with the powerful Clarius software. Project Tree lets you organize tests and control test sequencing without writing code Tag and organize test results USB 3.0 and 2.0 ports for use with keyboards, mouse and flashdrives More than 450 application tests jumpstart your testing Solid-state hard drive facilitates fast start-ups and data storage/transfer Large 15.6-inch touchscreen (1920×1080) HD display enables easier...

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4200A-SCS Parameter Analyzer - 4

1. Clarius Software Take your research to new levels of understanding with the new Clarius Software user interface. The 4200A-SCS includes the Clarius+ software package, which allows peforming nearly any type of I-V, C-V, and pulsed I-V characterization test. The Clarius Software user interface provides touch-and-swipe or point-and-click control for advanced test definition, parameter analysis, graphing, and automation capabilities for modern semiconductor, materials, and process characterization. Key Features • Ready-to-use, modifiable application tests, projects and devices that reduce...

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4200A-SCS Parameter Analyzer - 5

Step 1 - Build your Test Plan Search, filter and select from more than 450 pre-defined application tests, projects, and devices from the Clarius library. Learn about each test • with more detailed information including: • Comprehensive test descriptions • Schematic view of test • Required equipment • Short videos and application notes This test uses the ultra-fast single pulse technique (UFSP) to derive the channel carrier mobility of a MOS FET. Required equipment Two PMUswith RPMs Also see Application Note 3236: An Ultra-Fast Single Pulse (UFSP) Technique for Channel Effective...

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4200A-SCS Parameter Analyzer - 6

Step 2 – Configure Your Tests Quickly modify the test parameters using the Key Parameters View or All Parameters View. Key Parameters View provides a visual perspective on each test and device and helps to reduce the learning curve. All Parameters View is ideal for entering test parameters. Confirm operation modes at a glance. Step 3 – Analyze Results View results in either graphical and numerical results, filter your test data, and tag data for easy identification. Parameter extractions and data analysis are displayed automatically.

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4200A-SCS Parameter Analyzer - 7

2. Source Measure Units (SMU) Precision DC current vs. voltage (I-V) measurements are the cornerstone of device and materials characterization. World-class source measure unit (SMU) instruments are at the core of the 4200A-SCS Parameter Analyzer. A source measure unit can source either voltage or current and can simultaneously measure both voltage and current with high resolution and accuracy. The SMU integrates the voltage source, current source, ammeter and voltmeter in one instrument card for tight synchronization of I-V measurements. A source measure unit has four-quadrant capability,...

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4200A-SCS Parameter Analyzer - 8

Very-low Frequency C-V Technique with SMUs The 4200A-SCS offers the unique ability to perform very-low frequency capacitance-voltage measurements without an LCR meter or capacitance module. Low frequency C-V measurements are used to characterize the slow trapping and de-trapping phenomenon in some materials. Capacitance-voltage (C-V) measurements are often used to characterize a MOSFET’s gate oxide thickness, oxide defect density, doping profiles, etc. In this measurement, as the gate voltage varies, the capacitance of the gate to the drain and source changes. Capacitance measurements are...

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