Photodiode, APD, 2.5 Gb/s, Front-illuminated - JDSU - #1

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OPTICAL COMMUNICATIONS Key Features • Front-illuminated device for ease of assembly,with 53 micron diameter active region • -40 to 85°C operating temperature range • -33 dBm typical sensitivity (TIA dependent) • Better than -6 dBm overload performance (TIA dependent) • Uses proven, highly reliable JDSU APD designs The JDSU 2.5 Gbps front-illuminated avalanche photodiode (FI-APD) is designed for gigabit passive optical networks (GPON) that enable data transmissions for fiber-to-the-home (FTTH) offerings. As a result of their internal gain, APDs can significantly enhance receiver sensitivity relative to a standard PI photodiode. This FI-APD uses JDSU proprietary APD designs known for their superior reliability. The dark current at 95 percent of breakdown voltage is typically in the sub-nano-amp range. It has an optical window of 53 ìm, and a remote metal bond pad of 60 ìm. The FI-APD has an operating temperature range from -40°C to 85°C, and the sensitivity with a low noise TIA can reach -33 dBm. All APD chips come from JDSU-qualified wafers. Qualification includes burn-in and functional testing of a sample quantity of chips from each wafer. Each die shipped is tested at 25°C. Applications • GPON • SONET OC-48 • Ethernet Compliance • Fully qualified for Telcordia GR-468-CORE • RoHS compliant 2.5 Gbps Front-Illuminated APD Chip NORTH AMERICA: 800 498-JDSU (5378) WORLDWIDE: +800 5378-JDSU WEBSITE: www.jdsu.com