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IXYS 2013

IXYS 2013

Product catalog summary

Overview: The document provides comprehensive technical specifications and application notes for semiconductor devices such as voltage regulators, rectifier diodes, and IGBT switches. It details features, application areas, and technical parameters of these components.

Key Features:

Input voltage range from 8V to 450V.
Efficiency greater than 90%.
Capability to drive multiple LEDs in series/parallel combinations.
Regulated LED drive current with linear or PWM brightness control inputs.
Resistor-programmable oscillator frequency.
Available in 8-Pin SOIC and Power SOIC packages.

Product Application Notes:

Gate trigger requirements for GTO thyristors.
Implementation of gate turn-off thyristors for high-voltage applications.
Design concepts and characteristics of pressure-contact IGBTs.
Applications of press-pack IGBTs in traction refurbishment.
New high current press-pack IGBTs and extra fast recovery diodes.

Technical Specifications:

Rectifier diodes with blocking voltages from 200V to 6kV.
Optimized for low conduction losses and suitable for line frequency applications up to 400Hz.
Devices feature low thermal impedance and high overload capacity.
New designs with bonded die construction for improved thermal and electromechanical performance.

Data Tables: Extensive tables list various rectifier diodes and their specifications, such as VRRM (reverse repetitive maximum voltage), IFAV (average forward current), IFSM (surge forward current), and thermal resistance parameters, aiding in component selection for specific applications.

Component Types: Components are categorized into types like Soft Recovery Diodes, Extra Fast Recovery Diodes, High Power Sonic FRDs, and Phase Control Thyristors, each designed for specific applications with features like low reverse recovery current and high di/dt capability.

Applications: Suitable for modern switching applications, including IGBT and GCT applications, traction, medium voltage drives, induction heating, and pulsed power applications, emphasizing reduced conduction and switching losses.

Key Data: Tables provide detailed electrical characteristics, including reverse recovery time (trr), charge (Qrr), and thermal resistance (RthJK), along with weight specifications for different package styles.

Recommendations: Suggested use in applications requiring fast, low-loss diodes, emphasizing wide safe operating area (SOA) and suitability for high-frequency applications up to 400Hz.

Press-Pack IGBT Technology: Discusses advantages and applications of Press-Pack IGBT (PPIGBT) technology in medium and high voltage applications, highlighting backward compatibility with standard GTOs for equipment upgrades.

Specifications: Lists various gate drive units and corresponding IGBT types, emphasizing high reliability, low power consumption, and integrated EMI filtering, with pre-configured boards available for specific applications.

Features: Key features of the C044BG400 IGBT Gate Driver include high reliability topology, ultra-low power consumption, integrated DC/DC converter with soft start, and fiber-optic communication interface.

Applications: PPIGBTs are suitable for large and medium drives, renewable generation, and utility-scale converters, with detailed lists of dual thyristor modules, single thyristor modules, and diode modules.

Certifications: IXYS UK Westcode Ltd. has UL Certification for most modules, ensuring compliance with safety standards.

Cooling Options: Various cooling options, including water-cooled modules, are mentioned for efficient cooling and enhanced current rating.

Power Semiconductor Assemblies: IXYS UK offers a range of power semiconductor assemblies, providing economical alternatives to in-house design and assembly of discrete parts.

Specifications and Dimensions: Detailed specifications and dimensions for various electronic components are provided, with measurements in millimeters and inches, and weights ranging from 0.9 g to 310 g.

Outline Drawings: Outline drawings for different component packages ensure precise manufacturing and assembly.

Power Factor Correction: Application notes on power factor correction techniques aim to improve performance, efficiency, and reliability.

MOSFETs and IGBTs Drivers: Application notes focus on achieving greater efficiencies, power densities, and cost reductions in high voltage and high frequency scenarios.

Automotive Applications: Notes address the use of power electronics in automotive systems, including high current dual inline packaged trench MOSFETs.

Isolation Techniques, Mounting, Soldering, and Cooling: Guidelines on isolation techniques, mounting instructions, and soldering recommendations are provided.

Power Modules: Recommendations for using integrated NTC thermistor temperature sensors in power modules are provided.

FREDs and Schottky Diodes: Application notes discuss the characteristics and applications of fast recovery epitaxial diodes and Schottky diodes.

Power MOSFETs and IGBTs: Basic principles and applications of power MOSFETs and IGBTs are covered.

Application Notes Highlights: The document concludes with highlights of various application notes, providing further information and resources available for download.

Catalog excerpts

Certified Management Systems Alphanumeric Index ISOPLUS™ family IGBT Discretes PT IGBTs, G-series, 3rd and 4th Generation Fast PT IGBTs with SiC diode High Voltage Types up to 4000 V IGBT Modules Multi Level, CBI and 6-Pack Solutions Multi Level, Half Bridge and Boost Modules 6-Pack and Half Bridge High Power Modules Full Bridge & Solar Inverter Modules Half Bridge and Buck / Boost Modules Power MOSFETs Trench MOSFETs / HiPerFETs (Fast Body Diode) Polar™ MOSFETs / HiPerFETs (FBD) Legacy (Standard) MOSFETs Extended FBSOA Linear Power MOSFETs Depletion-Mode MOSFETs PolarP™ &TrenchP™ P-channel MOSFETs Very High Voltage MOSFETs (up to 4500 V) Trench and MOSFET Modules Power Factor Correction Modules Schottky Diodes Silicon Carbide Schottky Diodes HiPerDyn™ FREDs & Dual Ultrafast Diodes Sonic-FRDs™ Diodes FRED Diodes FRED & HiPerFRED™ Modules & Semifast Diodes Rectifier & Avalanche Types Studs: Rectifier & Avalanche Diodes & Thyristors 76 Rectifier Diode Modules 79, 139 Discretes Phase Control Thyristors 77 Accessories & Design Information 88 Rectifier Bridges Rectifier Bridges with Fast Diodes 89 1- Rectifier Bridges, half controlled 91 3~ Rectifier Bridges with Brake Unit 94 3~ Rectifier Bridges, half controlled 94 1-/3- High Voltage Rectifiers 97 Braking Rectifier Assemblies 97 Protection Devices Fast Break-over Diodes (BOD) 99 Gate Drivers & Power Relays 101 Application Notes & Technical Information 107 Fast Recovery Diodes 112 Soft Recovery Diodes 113 Extra Fast Recovery Diodes 116 High Power Sonic FRD's 117 Phase Control Thyristors 118 Medium Voltage Thyristors 124 Fast Turn-Off Thyristors 126 Distributed Gate Thyristors 128 Asymmetric and Pulse Thyristors 133 Insulated Gate Bi-polar Transistors - Press-Pack IGBTs 135 Press-Pack IGBT Gate Drive Units 136 Dual Thyristor/Single Thyristor Modules 137 Thyristor / Diode Modules 138 Dual & Single Diode Modules 139 Water Cooled Diode & Thyristor Modules 140 Power Semiconductor Assemblies 141 Westack - Modular Solutions 143 WestackLITE - Modular Solutions 145 Power Semiconductor Accessories 147 Power Semiconductor Chips @ DCB Ceramic Substrates 156 Outline Drawings Application Notes Highlights Sales Representatives and Distributors: See „Sales Offices" at

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Certified Management Systems Certificates ISO 9001:2008 Integrated Circuits Division Semiconductor GmbH Certificate of Registration QUALITY MANAGEMENT SYSTEM - ISO 9001:2008 This is to certify that: Holds Certificate Number: IXYS UK Westcode Ltd Langley Park Way Langley Park Chippenham SN15 1GE United Kingdom and operates a Quality Management System which complies with the requirements of ISO 9001:2008 for the following scope: The design and manufacture of discrete semiconductors and silicon assemblies, including single and multiphase, uncontrolled and fully controlled rectifiers, bridges and...

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Maximum forward current Average forward current Collector emitter breakdown voltage IF(AV)M, IT(AV)M Maximum average forward current Drain source breakdown voltage Sink current of fault terminal Maximum repetitive forward current Cies, Ciss Input capacitance IF(RMS), IT(RMS) Coes, Coss Output capacitance IFSM, ITSM Maximum surge forward current Cres, Crss Reverse transfer (Miller) capacitance Trigger gate current Non-trigger gate current Duty cycle Gate emitter leakage current Strike distance through air Holding current di/dt, - di/dt Rate of change of current Signal input current (high level)...

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Symbols and Terms RBSOA Reverse Bias Safe Operating Area Max. non-repetitive forward blocking voltage Static drain source on resistance Drain source breakdown voltage Radio frequency interference (= EMI) Various construction designs of products Gate resistance Forward voltage Gate emitter resistance Voltage at fault terminal Slope resistance (for power loss calculation only) VFR RthCK; RthCH Thermal resistance case to heatsink Gate non-trigger voltage Thermal resistance junction to ambient Gate emitter voltage Thermal resistance junction to case Gate emitter threshold voltage RthJK; RthJH Thermal...

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Device Type Rectifier diode Fast/soft recovery diode Extra fast diode HP Sonic-FRDTM Phase control thyristor Distributed gate thyristor Fast turn-off thyristor Medium voltage thyristor Asymmetric thyristor Symmetrical Gate Turn-off thyristor Fast Symmetrical Gate Turn-off thyristors Asymmetric Gate Turn-off thyristors Pulse Thyristors Device nominal current rating * For devices exceeding 9999 amperes, digit 5 of the part number changes to C (x10) Electrode diameter 19 mm 25 mm 29 mm 32 mm 34 mm 38 mm 47 mm 50 mm 57 mm 63 mm 66 mm / 68 mm 73 mm 75 mm 85 mm 99 mm 125 mm Housing Type (electrode...

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PRESS-PACK IGBT CAPSULE DEVICES 0 Rectifier diode Fast/soft recovery diode Phase control thyristor Fast turn-off thyristor Symmetrical Gate turn-off thyristor Device type Device nominal current rating Press-pack IGBT thyristor 0240 Device pulse current rating Pole electrode diameter N Reverse (diode only) ¾“ HV ceramic stud with lug Reverse conducting ½“ stud ceramic with flag M12 stud ceramic with lug Reversing (IGBT to diode ratio of 2:1) M20 stud ceramic with leg & lgate leads 04 Voltage grade - VRRM /100 Build description for multiple square die Voltage grade = VRRM / VDRM ÷ 100 tq code 0

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NEW PACKAGES NEW High Voltage TO-263 (D2-Pak) and TO-268 (D3-Pak) packages improved pin spacing (no middle pin) creepage distance pins to copper of backside: 4.7 mm for new TO-263 HV package 5.8 mm for new TO-268 HV package Products in TO-263 HV package (w/o middle pin) Technology Config. VRRM BIPOLAR New CMA 30E1600PZ DMA 10P1600PZ DNA 30E2200PZ DNA 30EM2200PZ IGBT & MOSFET New IXXA 30N65C3HV IXA 12IF1200PZ IXA 20I1200PZ IXTA 3N100D2HV IXGA 20N250HV IXBA 12N300HV IXTA 02N450HV Thyristor Rectifier Diode Rectifier Diode single Phase Leg Single Single Copack Single Depletion Mode MOSFET High Voltage...

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IXYS 2013

IXYS 2013

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