See other catalogues for
International Rectifier
You may also be interested in
Text version of the page
www.irf.com 1
4/17/08
IRGP4086PbF
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low VCE(on) and low EPULSE
TM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Features
Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery
Circuits in PDP Applications
Low VCE(on) and Energy per Pulse (EPULSE
TM)
for Improved Panel Efficiency
High Repetitive Peak Current Capability
Lead Free Package
G C E
Gate Collector Emitter
TO-247AC
G
C
E
C
E
C
G
n-channel
VCE min 300 V
VCE(ON) typ. @ IC = 70A 1.90 V
IRP max @ TC= 25°C 250 A
TJ max 150 °C
Key Parameters
Absolute Maximum Ratings
Parameter Units
VGE Gate-to-Emitter Voltage V
IC @ TC = 25°C Continuous Collector Current, VGE @ 15V A
IC @ TC = 100°C Continuous Collector, VGE @ 15V
IRP @ TC = 25°C Repetitive Peak Current
PD @TC = 25°C Power Dissipation W
PD @TC = 100°C Power Dissipation
Linear Derating Factor W/°C
TJ Operating Junction and °C
TSTG Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw N
Thermal Resistance
Parameter Typ. Max. Units
RčJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– 0.8
RčCS Case-to-Sink (flat, greased surface) 0.24 ––– °C/W
RčJA Junction-to-Ambient (typical socket mount) ––– 40
Weight 6.0 (0.21) ––– g (oz)
250
300
-40 to + 150
10lbin (1.1Nm)
160
63
1.3
Max.
40
70
±30
